Electrostatic Reliability Characteristics of GaN Flip-Chip Power Light-Emitting Diodes With Metal–Oxide–Silicon Submount

Chang, Liann‐Be; Chiang, Kuo-Ling; Chang, Hsin-Yi; Jeng, Ming–Jer; Yen, Chia-Yi; Lin, Chin Cheng; Chang, Yuan-Hsiao; Lai, Mu-Jen; Lee, Yu-Lin; Soong, Tai-Wei

doi:10.1109/ted.2009.2033774

Cited by 11 publications

(4 citation statements)

References 13 publications

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Section: Introductionmentioning

confidence: 99%

“…By providing an efficient heat sink using gold bumps, the adverse thermal effect in a power device can be considerably reduced. Moreover, a number of electrostatic discharge (ESD) protection circuits based on the FC configuration are used in light-emitting diode (LED) technologies [9][10][11][12]. In this study, an AlGaN/GaN HEMT integrated with a metal-insulator-metal (MIM) structure on an AlN FC submount using FC bumps was proposed to improve the ESD characteristics.…”

Section: Introductionmentioning

confidence: 99%

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Improvement in electrostatic discharge robustness of a gallium‐nitride‐based flip‐chip high‐electron mobility transistor with a metal–insulator–metal capacitor structure

Cheng

Chen

Chang

et al. 2019

IEEJ Transactions Elec Engng

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We report the improvement in the electrostatic discharge (ESD) characteristics of an AlGaN/GaN high‐electron mobility transistor (HEMT) with a metal–insulator–metal (MIM) capacitor structure on an aluminum nitride (AlN) flip‐chip (FC) submount. Compared with an HEMT without an FC, the measured results for the HEMT with an FC revealed improvements of 25% and 150% under drain‐to‐source and gate‐to‐source ESD stress, respectively. This improvement can be attributed to an additional stress‐bypassing path formed in the MIM structure on the AlN FC submount that allowed the flow of ESD current and supported the charge by using additional capacitance. © 2019 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Improvement in electrostatic discharge robustness of a gallium‐nitride‐based flip‐chip high‐electron mobility transistor with a metal–insulator–metal capacitor structure

Cheng

Chen

Chang

et al. 2019

IEEJ Transactions Elec Engng

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“…After the epitaxial growth, the phosphor-free WLED was processed and fabricated into chips. We applied a thermal sonic flip chip (FC) bonding technology, as shown in Figure 1 c,d, to bond the fabricated phosphor-free white LED chip to a silicon sub-mount [ 25 , 26 , 27 , 28 , 29 ], which acted as a heat sink. After the FC processing, the green-yellow QD is on the bottom, the blue QW is the top, and the emitted green-yellow light from the QD can easily penetrate the top blue QW layers and produce a high CRI value of 82, even under the elevated current operation conditions of 350–700 mA.…”

Section: Introductionmentioning

confidence: 99%

Phosphor-Free InGaN White Light Emitting Diodes Using Flip-Chip Technology

Chang

Chen

et al. 2017

Materials

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Monolithic phosphor-free two-color gallium nitride (GaN)-based white light emitting diodes (LED) have the potential to replace current phosphor-based GaN white LEDs due to their low cost and long life cycle. Unfortunately, the growth of high indium content indium gallium nitride (InGaN)/GaN quantum dot and reported LED’s color rendering index (CRI) are still problematic. Here, we use flip-chip technology to fabricate an upside down monolithic two-color phosphor-free LED with four grown layers of high indium quantum dots on top of the three grown layers of lower indium quantum wells separated by a GaN tunneling barrier layer. The photoluminescence (PL) and electroluminescence (EL) spectra of this white LED reveal a broad spectrum ranging from 475 to 675 nm which is close to an ideal white-light source. The corresponding color temperature and color rendering index (CRI) of the fabricated white LED, operated at 350, 500, and 750 mA, are comparable to that of the conventional phosphor-based LEDs. Insights of the epitaxial structure and the transport mechanism were revealed through the TEM and temperature dependent PL and EL measurements. Our results show true potential in the Epi-ready GaN white LEDs for future solid state lighting applications.

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“…Recently, due to the high power operation of indoor and outdoor lighting, flip chip (FC) technology has been widely used; it can solve the heat accumulation problem effectively. Intense research is being carried out by different groups to improve the light output efficiency of FCLEDs [6][7][8][9][10]. However, most of the FCLED submounts used today are not transparent, which decreases the output light extraction.…”

Section: Introductionmentioning

confidence: 99%

Output Properties of Transparent Submount Packaged FlipChip Light-Emitting Diode Modules

Singh¹,

Yeh²,

Tan

et al. 2016

Applied Sciences

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Flip chip technology has been widely adopted in modern power light-emitting diode (LED) fabrications and its output efficiency is closely related to the submount material properties. Here, we present the electrical, optical and thermal properties of flip chip light-emitting diodes mounted on transparent sapphire and borosilicate glass which have shown a higher output luminous flux when compared to the traditional non-transparent mounted LEDs. Exhibiting both better thermal conductivity and good optical transparency, flip chip LEDs with a sapphire submount showed superior performance when compared to the non-transparent silicon submount ones, and also showed better optical performance than the flip chip LEDs mounted on transparent but poor-thermal-conducting glass substrates. The correspondent analysis was carried out using ANSYS 14 to compare the experimental thermal imaging with the simulation results. TracePro software was also used to check the output luminous flux dependency on different LED mounting designs.

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Electrostatic Reliability Characteristics of GaN Flip-Chip Power Light-Emitting Diodes With Metal–Oxide–Silicon Submount

Cited by 11 publications

References 13 publications

Improvement in electrostatic discharge robustness of a gallium‐nitride‐based flip‐chip high‐electron mobility transistor with a metal–insulator–metal capacitor structure

Improvement in electrostatic discharge robustness of a gallium‐nitride‐based flip‐chip high‐electron mobility transistor with a metal–insulator–metal capacitor structure

Phosphor-Free InGaN White Light Emitting Diodes Using Flip-Chip Technology

Output Properties of Transparent Submount Packaged FlipChip Light-Emitting Diode Modules

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