Electrostatically Doped Silicon Nanowire Arrays for Multispectral Photodetectors

Um, Han‐Don; Solanki, Amit; Jayaraman, Ashwin; Gordon, Roy G.; Habbal, F.

doi:10.1021/acsnano.9b05659

Cited by 28 publications

(34 citation statements)

References 47 publications

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“…Since in this case, the intrinsic absorption constitutes the main reason for the photon energy loss, 30 the majority of incident UV photons will be absorbed by the SiNWs, which might be beneficial for UV light detection. It should be noted that, while a number of research groups have reported various SiNW arrays that exhibit tailorable absorption in the NIR and visible light regions, 31,32 we have successfully reported experimentally SiNW arrays whose peak absorption can be tuned from the NIR to UV light regions by engineering the diameter. This finding is interesting and can be attributed to the PS assisted etching method, which can achieve very good anisotropic Si etching with aspect ratios as high as 100.…”

Section: Resultsmentioning

confidence: 89%

Leaky Mode Resonance-Induced Sensitive Ultraviolet Photodetector Composed of Graphene/Small Diameter Silicon Nanowire Array Heterojunctions

Wang

Cheng

et al. 2021

ACS Nano

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Ultraviolet photodetectors (UVPDs) based on wide band gap semiconductors (WBSs) are important for various civil and military applications. However, the relatively harsh preparation conditions and the high cost are unfavorable for commercialization. In this work, we proposed a non-WBS UVPD by using a silicon nanowire (SiNW) array with a diameter of 45 nm as building blocks. Device analysis revealed that the small diameter SiNW array covered with monolayer graphene was sensitive to UV light but insensitive to both visible and infrared light illumination, with a typical rejection ratio of 25. Specifically, the responsivity, specific detectivity, and external quantum efficiency under 365 nm illumination were estimated to be 0.151 A/W, 1.37 × 1012 Jones, and 62%, respectively, which are comparable to or even better than other WBS UVPDs. Such an abnormal photoelectrical characteristic is related to the HE1m leaky mode resonance (LMR), which is able to shift the peak absorption spectrum from near-infrared to UV regions. It is also revealed that this LMR is highly dependent on the diameter and the period of the SiNW array. These results show narrow band gap semiconductor nanostructures as promising building blocks for the assembly of sensitive UV photodetectors, which are very important for various optoelectronic devices and systems.

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Section: Resultsmentioning

confidence: 89%

Leaky Mode Resonance-Induced Sensitive Ultraviolet Photodetector Composed of Graphene/Small Diameter Silicon Nanowire Array Heterojunctions

Wang

Cheng

et al. 2021

ACS Nano

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“…The ease of bandgap conversion from indirect to direct band due to dimension, crystallography, mechanical strain, and alloying allows SiNWs to be used in the optical applications—e.g., photodetectors (PDs) and light emitters (LEs). Since silicon nanowires have a superior ability to tune absorption with morphology, Um et al reported that SiNWs with a coating of an indium oxide layer on it, lead to efficient carrier separation and collection, resulting in an improvement of quantum efficiency and by controlling the nanowire radii, can create a multispectral detector [ 229 ].…”

Section: Applicationsmentioning

confidence: 99%

Functional Devices from Bottom-Up Silicon Nanowires: A Review

et al. 2022

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This paper summarizes some of the essential aspects for the fabrication of functional devices from bottom-up silicon nanowires. In a first part, the different ways of exploiting nanowires in functional devices, from single nanowires to large assemblies of nanowires such as nanonets (two-dimensional arrays of randomly oriented nanowires), are briefly reviewed. Subsequently, the main properties of nanowires are discussed followed by those of nanonets that benefit from the large numbers of nanowires involved. After describing the main techniques used for the growth of nanowires, in the context of functional device fabrication, the different techniques used for nanowire manipulation are largely presented as they constitute one of the first fundamental steps that allows the nanowire positioning necessary to start the integration process. The advantages and disadvantages of each of these manipulation techniques are discussed. Then, the main families of nanowire-based transistors are presented; their most common integration routes and the electrical performance of the resulting devices are also presented and compared in order to highlight the relevance of these different geometries. Because they can be bottlenecks, the key technological elements necessary for the integration of silicon nanowires are detailed: the sintering technique, the importance of surface and interface engineering, and the key role of silicidation for good device performance. Finally the main application areas for these silicon nanowire devices are reviewed.

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“…Semiconductor nanowires (NWs) show high light sensitivity due to the large surface area to volume ratio, as well as high photoconductive gain due to surface state promoted charge separation. Silicon is one of the most common visible light photoconductive materials due to its common use in electronics [2] and the resulting highly developed fabrication technology [4][5][6][7]. When silicon-based nanoscale photodetection devices perform in the near field of the observed object, they are disturbed by noise introduced due to light scattered by the sensor itself [2,8,9].…”

Section: Introductionmentioning

confidence: 99%

Zirconium Nitride for Plasmonic Cloaking of Visible Nanowire Photodetectors

et al. 2020

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Light scattered by a photodetector disturbs the probing field, resulting in noise. Cloaking is an effective method to reduce this noise. Here we investigate theoretically an emerging plasmonic material, zirconium nitride (ZrN), as a plasmonic cloak for silicon (Si) nanowire-based photodetectors and compare it with a traditional plasmonic material, gold (Au). Using Mie formalism, we have obtained the scattering cancelation across the visible spectrum. We found that ZrN cloaks produce a significant decrease in the scattering from bare Si nanowires, which is 40% greater than that obtained with Au cloaks in the wavelength region of 400-500 nm. The scattering cancelations become comparable at 550 nm, with Au providing a better scattering cancelation compared to ZrN over the wavelength region of 600-700 nm. To include the absorption and provide a measure of overall performance on noise reduction, a figure of merit (FOM), defined as the ratio of the absorption efficiency and the scattering efficiency of the cloaked nanowire to that of the bare Si nanowire, was calculated. We show that the optimized ZrN cloak provides up to 3 times enhancement of the FOM over a bare Si NW and a 60% improvement over an optimized Au-cloaked NW, in the wavelength region of 400-500 nm. An optimized Au-cloaked NW shows up to 17.69 times improvement in the wavelength region of 600-700 nm over a bare Si NW and up to a 2.7 times improvement over an optimized ZrN-cloaked NW. We also predicted the optimal dimensions for the cloaked NWs with respect to the largest FOM at various wavelengths between 400 and 650 nm.

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Electrostatically Doped Silicon Nanowire Arrays for Multispectral Photodetectors

Cited by 28 publications

References 47 publications

Leaky Mode Resonance-Induced Sensitive Ultraviolet Photodetector Composed of Graphene/Small Diameter Silicon Nanowire Array Heterojunctions

Leaky Mode Resonance-Induced Sensitive Ultraviolet Photodetector Composed of Graphene/Small Diameter Silicon Nanowire Array Heterojunctions

Functional Devices from Bottom-Up Silicon Nanowires: A Review

Zirconium Nitride for Plasmonic Cloaking of Visible Nanowire Photodetectors

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