Electrosynthesis and studies on Cadmium-Indium-Selenide thin films

Mahalingam, T.; Thanikaikarasan, S.; Chandramohan, R.; Chung, Kihyun; Chu, Jinn P.; Velumani, S.; Rhee, Jin‐Koo

doi:10.1016/j.mseb.2010.03.055

Cited by 19 publications

(10 citation statements)

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“…The estimable Fe intercalation on W site and distortion in crystal lattice leads to lower diffraction angle which creates a number of defects favorable for gas sensing. The crystallite size was calculated using Scherrer's formula 6 . The value of average crystallite D of film is 46.5 nm which increases to 48.3 nm after Fe doping which increases the amount of oxygen vacancies which is favourable for gas sensing.…”

Section: Resultsmentioning

confidence: 99%

Fe Doped WO3 Thin films Prepared by Spray Pyrolysis towards Ethanol Sensing

2018

IJCTR

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WO 3 and Fe doped WO 3 thin films were deposited on glass substrate using spray pyrolysis technique. The structural properties reveals the crystalline nature with preferred oriented (200) plane along c-axis direction. There is a shift in the band edge towards longer wavelength after Fe incorporation is confirmed from optical properties. Compare to WO 3 , Fe doped WO 3 shows large sensor response towards ethanol.3 Introduction:Medical detection, environmental protection and food industries give a prior place to ethanol sensors. Ethanol present in human breath can be easily detected by breath alcohol analysis in which detection of ethanol is an important feature 1 . Present researches include the development of ethanol sensors at lower operating temperature with better selectivity and sensitivity. Metal oxide semiconductors (MOS) promises a new generation of gas sensing devices among which tungsten trioxide WO 3 has great attention 2,3 . WO 3 doped with other elements has high performance and efficiency. The sensing properties of the film can be upgraded significantly which becomes the main objective of doping the films with catalytic ion in presence of ethanol. However no enhancement of ethanol sensing performance of with the catalytic doping was observed.Fe is one of the most warrant materials with WO 3 to enhance the physical and chemical properties for optoelectronics device application 4 . Compare to other techniques, spray pyrolysis is the most suitable method to produce metal oxide thin film with huge number of pores and fabricate metal oxide sensors. The growth of the film use a novel spray pyrolysis deposition route with a spray nozzle and crystal structure, optical properties of Fe doped WO 3 were investigated. Experimental ProcedurePristine and Fe activated films fabricated on glass substrate at 400 route using (0.3 M) tungsten chloride 0.5 iron chloride precursor. The carrier gas flow rate is fixed at 0.3 Kg cm 2 . The precursor volume is 100 ml using the solvent ethanol and solution feeding rate is 4 ml/min. The distance between the substrate and the spray nozzle is kept 20 cm with the deposition time of 12 min. The spray nozzle is designed in such a way

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Section: Resultsmentioning

confidence: 99%

Fe Doped WO3 Thin films Prepared by Spray Pyrolysis towards Ethanol Sensing

2018

IJCTR

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“…In the present work In has been chosen as an additive element in Se-Cd matrix to prepare Se-Cd-In alloys, because it is recognized as one of the most efficient elements used to improve the opto-electronic properties of compounds [19]. The third element behaves as chemical modifier and creates compositional as well as configurational disorder in the material with respect to binary alloys, which will be useful in understanding the structural, electrical and optical properties of Se-Cd-In chalcogenide glasses [20,21,22]. Se-Cd-In is a semiconductor ternary chalcogenide glass of the type A VI B II C III , where A = Se, Te, S, B = Cd, Zn and C=In, Tl, Ga.…”

Section: Introductionmentioning

confidence: 99%

Structural and Optical Properties of Different Composition of Se90Cd10-xInx thin Films by Vacuum Evaporation Technique

Dwivedi¹,

Shukla²,

Pathak³

2014

AJMSE

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Se 90 Cd 10-x In x (x=2,4,6 &8) thin films have been deposited onto a chemically cleaned glass substrate by thermal evaporation technique under vacuum. The effects of different doping concentration of In have been investigated X-ray diffraction technique has been employed to investigate the structural characterization of the films. X-ray diffraction measurement indicates that the Se 90 Cd 10-x In x films possess polycrystalline structure. Absorption spectra measured at normal incidence in the wavelength range 400-1100 nm have been analyzed for the optical characterization of the thin films under consideration. The optical constants (absorption coefficient (α), extinction coefficient (k)) and optical band gap E g have been calculated. The absorption coefficient (α) is found to increase with photon energy. It has been found that extinction coefficient (K) decreases with increase in wavelength (λ). Optical band gap (E g ) has also been evaluated for the Se 90 Cd 10-x In x thin films with different compositions. It has been found that optical band gap (E g ) increases with In incorporation in Se 90 Cd 10-x In x alloys.

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“…Recently, ternary compounds of II-III-VI group attract many researchers due to their applications in optoelectronic devices and solar cells [1][2][3]. Among II-III-VI group ternary compounds, Cadmium indium selenide (CdIn 2 Se 4 ) is one of the interesting semiconductors due to its optical absorption property with a narrow band gap and a low electrical resistance [4,5].…”

Section: Introductionmentioning

confidence: 99%

“…The low resistivity of photoelectrode is required to minimize the series resistance of PEC cell. Due to its wide applications, this compound is always prepared as thin film via many methods such as electro-deposition [10], slurry pasting technique [11], vacuum evaporation [3] and spray pyrolysis [12,13]. The deposition of CdIn 2 Se 4 thin films have been carried out using relatively inexpensive, simple and convenient for large area deposition, spray pyrolysis technique.…”

Section: Introductionmentioning

confidence: 99%

“…Number of methods such as vacuum evaporation [15], slurry pasting technique [11] have been attempted to prepare CdIn 2 Se 4 thin films and studied their properties. Mahalingam et al [3] reported electro synthesis of CdIn 2 Se 4 films on ITO substrates. The dependency of microstructural parameters such as crystallite size, strain and dislocation density with deposition potential has been studied.…”

Section: Introductionmentioning

confidence: 99%

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