Electrothermal Simulation and Thermal Performance Study of GaN Vertical and Lateral Power Transistors

Zhang, Yuhao; Sun, Min; Liu, Zhihong; Piedra, Daniel; Lee, Hyung Seok; Gao, Feng; Fujishima, Tatsuya; Palacios, Tomás

doi:10.1109/ted.2013.2261072

Cited by 166 publications

(68 citation statements)

References 24 publications

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“…Lateral structures, such as AlGaN/GaN high-electron-mobility transistors, though having been studied extensively, still face reliability and integration challenges [1]. GaN vertical devices have attracted increased attention recently, due to several potential advantages over GaN lateral devices: 1) higher breakdown voltage (BV) capability without enlarging chip size [2]; 2) superior reliability due to the peak electric field (E peak ) being far away from the surface; and 3) superior thermal performance [2]. Recent demonstrations of highperformance vertical GaN diodes [3] and transistors [4], [5] on GaN susbstrates have made vertical structures very promising for the GaN power devices.…”

mentioning

confidence: 99%

Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes

Zhang

Sun

Wong

et al. 2015

IEEE Trans. Electron Devices

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136

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Abstract-Conventional GaN vertical devices, though promising for high-power applications, need expensive GaN substrates. Recently, low-cost GaN-on-Si vertical diodes have been demonstrated for the first time. This paper presents a systematic study to understand and control the OFF-state leakage current in the GaN-on-Si vertical diodes. Various leakage sources were investigated and separated, including leakage through the bulk drift region, passivation layer, etch sidewall, and transition layers. To suppress the leakage along the etch sidewall, an advanced edge termination technology has been developed by combining plasma treatment, tetramethylammonium hydroxide wet etching, and ion implantation. With this advanced edge termination technology, an OFF-state leakage current similar to Si, SiC, and GaN lateral devices has been achieved in the GaN-on-Si vertical diodes with over 300 V breakdown voltage and 2.9-MV/cm peak electric field. The origin of the remaining OFF-state leakage current can be explained by a combination of electron tunneling at the p-GaN/drift-layer interface and carrier hopping between dislocation traps. The low leakage current achieved in these devices demonstrates the great potential of the GaN-on-Si vertical device as a new low-cost candidate for high-performance power electronics.Index Terms-Edge termination, GaN-on-Si vertical device, leakage control, leakage origin, power electronics.

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confidence: 99%

Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes

Zhang

Sun

Wong

et al. 2015

IEEE Trans. Electron Devices

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136

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“…Emerging high electron mobility transistor (HEMT) technologies may raise the requirement to even higher orders as the heat generation is concentrated in a very thin layer. This is demonstrated in [49], where results are limited to two-dimensional (2D) models due to computational constraints. However, 3D analysis of Gallium Nitride based HEMTs may provide additional insights according to [50].…”

Section: Discussionmentioning

confidence: 99%

Electrothermal Multiscale Modeling and Simulation Concepts for Power Electronics

Köck¹,

Eiser²

2016

IEEE Trans. Power Electron.

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This paper presents a finite element based simulation methodology to improve on multiscale modeling and analysis limitations of power electronics development. The method utilizes homogenization and non-matching grid concepts to offer a high degree of flexibility and reduce computational effort. The applied homogenization method provides effective material properties to realize full chip modeling performance without the need to model geometric details. The concept of non-matching grids allows the inclusion of a sub-region with substantially finer mesh than its surrounding regions. This allows the flexible integration of micrometer scale geometries with a high degree of detail within the full chip model. Both concepts are thoroughly introduced and an application to a state-of-the-art power electronics semiconductor technology is presented. This work focus on electrothermal interaction and is experimentally verified on a dedicated test structure. The presented results provide electrothermal insights in current power electronic technologies and emphasize their potential to further improve the robustness and reliability of next generation technologies.Index Terms-power semiconductor devices, heat transfer, electrothermal effects, thermal characterization, finite element methods, multiscale modeling 0885-8993 (c)

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“…Field-effect transistors (FETs) based on gallium nitride (GaN) have considered as the preferred choice for high power electronic devices owing to the wide band gap, high critical electric field, and high electron mobility of GaN [1][2][3][4][5][6]. AlGaN/GaN-based high electron mobility transistor (HEMT) has the two-dimensional electron gas (2-DEG) generated by the spontaneous polarization and piezoelectric polarization that have superior properties such as high power density and high breakdown voltage, and high channel electron mobility.…”

Section: Introductionmentioning

confidence: 99%

DC and RF Analysis of Geometrical Parameter Changes in the Current Aperture Vertical Electron Transistor

Kang¹,

Seo²,

Yoon³

et al. 2016

Journal of Electrical Engineering and Technology

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-This paper presents the electrical characteristics of the gallium nitride (GaN) current aperture vertical electron transistor (CAVET) by using two-dimensional (2-D) technology computeraided design (TCAD) simulations. The CAVETs are considered as the alternative device due to their high breakdown voltage and high integration density in the high-power applications. The optimized design for the CAVET focused on the electrical performances according to the different gate-source length (L GS ) and aperture length (L AP ). We analyze DC and RF parameters inducing on-state current (I on ), threshold voltage (V t ), breakdown voltage (V B ), transconductance (g m ), gate capacitance (C gg ), cut-off frequency (f T ), and maximum oscillation frequency (f max ).

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Electrothermal Simulation and Thermal Performance Study of GaN Vertical and Lateral Power Transistors

Cited by 166 publications

References 24 publications

Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes

Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes

Electrothermal Multiscale Modeling and Simulation Concepts for Power Electronics

DC and RF Analysis of Geometrical Parameter Changes in the Current Aperture Vertical Electron Transistor

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