Electrothermal simulation of multichip-modules with novel transient thermal model and time-dependent boundary conditions

Gerstenmaier, Y.C.; Castellazzi, Alberto; Wachutka, G.

doi:10.1109/tpel.2005.861116

Cited by 65 publications

(30 citation statements)

References 17 publications

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“…Boundary conditions are important under parameter extraction procedures, whether a global approach is used [21] or based on terminal behavior [12]. The method described in this paper tends to be more similar to that used in [21].…”

Section: -D Fourier Series Thermal Modelmentioning

confidence: 99%

“…The approach of this new IGBT model is to solve the ambipolar diffusion equation (ADE), describing the dynamic charge, with the Fourier-series-based solution method [19], [20]. This method also results in a similar solution as proposed in [21]. The number of nodes required in our method is typically lower than the number of effective time constants (equivalent to nodes) proposed in [21], though the resulting electrical equivalent circuit is the same in both thermal models, an equivalent RC-ladder network with associated current sources.…”

Section: Introductionmentioning

confidence: 99%

“…The number of nodes required in our method is typically lower than the number of effective time constants (equivalent to nodes) proposed in [21], though the resulting electrical equivalent circuit is the same in both thermal models, an equivalent RC-ladder network with associated current sources. Another disadvantage described in [21] is the need to use FEM simulations of heating curves (thermal impedances) to create the necessary model matrix used in the circuit simulations. Our method does not require any simulated or experimental data, but only knowledge of the package system materials and physical dimensions.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Transient Electrothermal Simulation of Power Semiconductor Devices

Hudgins

Santi

et al. 2010

IEEE Trans. Power Electron.

135

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Section: -D Fourier Series Thermal Modelmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Transient Electrothermal Simulation of Power Semiconductor Devices

Hudgins

Santi

et al. 2010

IEEE Trans. Power Electron.

135

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“…deconvolution solutions [10], Fourier series solutions [11], Green's functions solutions [12], eigenvalue solutions [13] and the diffusive representation approach [14]. These approaches are based on analytical expressions, which are function of the design geometry and the material properties.…”

mentioning

confidence: 99%

“…The effect of the boundary conditions on compact thermal models has been investigated in some research works. For example in [12] a transient thermal model for multi-chip power modules has been introduced, which includes time-dependent boundary conditions. Similarly in [17] a transient thermal model for data centers has been introduced, which includes modeling of server thermal mass changing with power dissipations and computer room air-conditioning.…”

mentioning

confidence: 99%

A Lumped Thermal Model Including Thermal Coupling and Thermal Boundary Conditions for High-Power IGBT Modules

Bahman

Blaabjerg

2018

IEEE Trans. Power Electron.

209

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Abstract-Detailed thermal dynamics of high power IGBT modules are important information for the reliability analysis and thermal design of power electronic systems. However, the existing thermal models have their limits to correctly predict these complicated thermal behavior in the IGBTs: The typically used thermal model based on one-dimensional RC lumps have limits to provide temperature distributions inside the device, moreover some variable factors in the real-field applications like the cooling and heating conditions of the converter cannot be adapted. On the other hand, the more advanced threedimensional thermal models based on Finite Element Method (FEM) need massive computations, which make the long-term thermal dynamics difficult to calculate. In this paper, a new lumped three-dimensional thermal model is proposed, which can be easily characterized from FEM simulations and can acquire the critical thermal distribution under long-term studies. Meanwhile the boundary conditions for the thermal analysis are modeled and included, which can be adapted to different realfield applications of power electronic converters. Finally, the accuracy of the proposed thermal model is verified by FEM simulations and experimental results show a good agreement.

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Fast 3D thermal simulation of power module packaging

Swan

Bryant

Mawby

2012

Int J Numerical Modelling

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SUMMARY This paper presents a thermal model that uses a Fourier series solution to the heat equation to carry out transient 3D thermal simulation of power device packaging. The development and implementation of this physics‐based method is described. The method is demonstrated on a stacked 3D multichip module. The required aspects of 3D heat conduction are captured successfully by the model. Compared with previous thermal models presented in literature, it is fast, accurate and can be easily integrated with an inverter circuit simulator to model realistic converter load cycles. Copyright © 2012 John Wiley & Sons, Ltd.

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Electrothermal simulation of multichip-modules with novel transient thermal model and time-dependent boundary conditions

Cited by 65 publications

References 17 publications

Transient Electrothermal Simulation of Power Semiconductor Devices

Transient Electrothermal Simulation of Power Semiconductor Devices

A Lumped Thermal Model Including Thermal Coupling and Thermal Boundary Conditions for High-Power IGBT Modules

Fast 3D thermal simulation of power module packaging

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