Elektrische Eigenschaften der Halbleiter bei tiefen Temperaturen

Lautz, Günter

doi:10.1007/bfb0119536

Cited by 1 publication

(1 citation statement)

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“…Impact ionization is indicated near 10 V/cm, depleting electrons from shallow donors. Thermal depletion is completed at 54 K. (After Lautz (1961)) as the condition for the electron-energy threshold. In typical semiconductors, the observed threshold energy is larger, since the bands are nonparabolic and the effective mass increases with increasing energy; for example, for GaAs, we find E ii ffi 2.0 E g , and for Si, we have E ii ffi 2.3 E g .…”

Section: Impact Ionization Across the Bandgapmentioning

confidence: 99%

Carrier Generation

Böer¹,

Pohl²

2017

Semiconductor Physics

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When the semiconductor is exposed to an external electromagnetic field, a phonon field, or an electric field, free carriers can be generated, resulting in semiconductivity or photoconductivity. Carriers can also be generated by highenergy particles, such as fast electrons or ions. Optical carrier generation proceeds as band-to-band direct or indirect generation or from defect levels with photons of sufficient energy. Thermal generation of free carriers is substantially enhanced by defect centers. Shallow centers may absorb a phonon of sufficient energy or a few phonons involving intermediate steps into excited states; generation from deep centers requires multiphonon-induced giant oscillations. Generation of carriers by an electric field can at low fields be caused by the Frenkel-Poole effect: a field-enhanced thermal generation from Coulomb

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Section: Impact Ionization Across the Bandgapmentioning

confidence: 99%