Elemental Quantitative Imaging Analysis Of Bi4Si3O12 Crystals Defects By LA-ICP-MS

Abstract

In this study, a laser ablation inductively coupled plasma mass spectrometry (LA-ICP-MS) method is developed for in -situ quantitative imaging of trace impurity elements in Bi4Si3O12 (BSO) crystals. This method has unique advantages of low detection limit and high spatial resolution for the analysis of defects in crystal microregions. The regression coefficients of the calibration curves for each element were greater than 0.99, and the detection limits (