2023
DOI: 10.1149/2162-8777/acaee4
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Elemental Redistribution During the Crystallization of Ge–Cu–Te Thin Films for Phase-Change Memory

Abstract: Herein, a GeCu2Te2 alloy is proposed as a phase-change material for application in nonvolatile phase-change random access memory (PRAM). The crystallization kinetics and microchemical changes during phase transformation are investigated, and their correlation with the electrical behaviors of the GeCu2Te2 thin films are examined. The key findings are as follows: (ⅰ) the GeCu2Te2 alloy shows a higher crystallization temperature (~185°C) than the classic Ge2Sb2Te5 (GST) thin films, thus demonstrating superior the… Show more

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Cited by 2 publications
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