Elemental Topological Insulator with Tunable Fermi Level: Strained<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>α</mml:mi></mml:math>-Sn on InSb(001)

Barfuss, Arne; Dudy, L.; Scholz, Markus; Roth, H.; Höpfner, P.; Blumenstein, C.; Landolt, G.; Dil, J. Hugo; Plumb, N. C.; Radović, M.; Bostwick, Aaron; Rotenberg, Eli; Fleszar, A.; Bihlmayer, Gustav; Wortmann, Daniel; Li, Gang; Hanke, W.; Claessen, R.; Schäfer, J.

doi:10.1103/physrevlett.111.157205

Cited by 146 publications

(148 citation statements)

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“…The lattices of -Sn and InSb are nearly matched, but a slight mismatch results in an in-plane compressive strain of 0.14% for the -Sn overlayer [19,31]. The crystal structure of (111)-oriented -Sn films is shown in Fig.…”

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confidence: 99%

“…Liang Fu et al theoretically proposed that such an insulator phase was a strong 3D topological insulator [18]. Two recent experimental studies demonstrated the existence of topological surface states in the valence band regions of -Sn films grown on InSb(001), but no experimental evidence of the strain-induced gap [19,20].…”

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confidence: 99%

“…! VB in -Sn is inverted; modifications to the band topology can lead to non-trivial topological phases [18,19]. directions; these features are indicative of a TDS.…”

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confidence: 99%

“…Fig. 1 [19] or Bi [20] into Sn films to help films grow smoothly, no such impurity atoms were introduced in our thin film samples yet they were of high-quality. The strain in the 30-BL film was measured by X-ray diffraction using the !…”

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Elemental Topological Dirac Semimetal: α -Sn on InSb(111)

et al. 2017

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Three-dimensional (3D) topological Dirac semimetals (TDSs) are rare but important as a versatile platform for exploring exotic electronic properties and topological phase transitions. A quintessential feature of TDSs is 3D Dirac fermions associated with bulk electronic states near the Fermi level. Using angle-resolved photoemission spectroscopy (ARPES), we have observed such bulk Dirac cones in epitaxially-grown 𝛼-Sn films on InSb(111), the first such TDS system realized in an elemental form. First-principles calculations confirm that epitaxial strain is key to the formation of the TDS phase. A phase diagram is established that connects the 3D TDS phase through a singular point of a zero-gap semimetal phase to a topological insulator (TI) phase. The nature of the Dirac cone crosses over from 3D to 2D as the film thickness is reduced.

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confidence: 99%

“…! VB in -Sn is inverted; modifications to the band topology can lead to non-trivial topological phases [18,19]. directions; these features are indicative of a TDS.…”

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confidence: 99%

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Elemental Topological Dirac Semimetal: α -Sn on InSb(111)

et al. 2017

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“…Various approaches have been taken to modulate the electronic properties of stanene. [24][25][26][27][28] Tang et al 27 demonstrated that functionalization on stanene can open up the gap. Furthermore, the substrate plays an important role to tune the electronic properties of stanene due to the strong interaction.…”

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Band gap opening in stanene induced by patterned B–N doping

Garg

Choudhuri

Mahata

et al. 2017

Phys. Chem. Chem. Phys.

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Abstract:Stanene is a quantum spin hall insulator and a promising material for electronic and optoelectronic devices. Density functional theory (DFT) calculations are performed to study the band gap opening in stanene by elemental mono-(B, N) and co-doping (B-N). Different patterned B-N co-doping is studied to change the electronic properties in stanene. A patterned B-N co-doping opens the band gap in stanene and the semiconducting nature persists with strain. Molecular dynamics (MD) simulations are performed to confirm the thermal stability of such doped system. The stress-strain study indicates that such doped system is as stable as pure stanene. Our work function calculations show that stanene and doped stanene has lower work function than graphene and thus promising material for photocatalysis and electronic devices.

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Ab Initio Calculations of Two‐Dimensional Topological Insulators*

Bihlmayer

Koroteev

Menshchikova

et al. 2015

Topological Insulators

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Since its discovery in 2005, the field of topological insulators (TIs) has experienced enormous expansion and created unforeseen activity in the solid-state physics community and beyond. Conceptually, the development of this field had its origin in the physics of the quantum Hall effect (QHE) of the two-dimensional (2D) electron gas [1,2], although today we use the topological concepts developed there to characterize also three-dimensional (3D) insulators [3]. On their surfaces, the signatures of the topology can be seen in the dispersion of the surface bands, as observed using angle-resolved photoemission spectroscopy (ARPES) and its spin-polarized angle-resolved photoemission spectroscopy (SP-ARPES) variant [4]. For the experimental verification of the quantum spin Hall effect (QSHE), however, the 2D-TIs played a vital role, and their unique transport properties are a major driving force of this field. Moreover, confining 3D topological semimetals in 2D geometries offers the possibility to open up a bandgap by size-quantization effects and create 2D TIs. A prominent example for this strategy is HgTe/CdTe quantum wells, where QSHE was observed experimentally for the first time [5].For the development of the field of TIs, the study of model Hamiltonians was definitely the first and most important theoretical tool. For many semiconductors, specialized ⋅ Hamiltonians were developed from the late 1950s, which describe the electronic structure near the bandgap with high precision. But after the experimental realization of 3D TIs comprised of different elements, density functional theory (DFT) calculations became increasingly important to describe the bulk and surface bandstructures of whole families of compounds, to investigate their topological properties. Also for 2D TIs, there are questions that are most conveniently addressed within DFT, for example, issues of structural stability, interactions with substrates, and other effects that are difficult to embody into a model Hamiltonian with sufficient accuracy.

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Elemental Topological Insulator with Tunable Fermi Level: Strainedα-Sn on InSb(001)

Cited by 146 publications

References 32 publications

Elemental Topological Dirac Semimetal: α -Sn on InSb(111)

Elemental Topological Dirac Semimetal: α -Sn on InSb(111)

Band gap opening in stanene induced by patterned B–N doping

Ab Initio Calculations of Two‐Dimensional Topological Insulators*

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