Elements for photodetectors based on epitaxial layers In<inf>4</inf>Se<inf>3</inf>, In<inf>4</inf>Te<inf>3</inf> and Cdsb

A voltammetry investigation of the exchange processes running on the interphase CdSb/electrolyte

“…It is a wellinvestigated compound; methods used for its synthesis are thoroughly elaborated, while the area of utilization of this anisotropic material in various electronic, thermoelectric, and optoelectronic devices is quite wide. [6][7][8][9][10] Zhou and co-authors 6 have identified and provided the description of the main parameters representing highly effective thermoelectric properties of the CdSb monocrystals. Another analysis of the thermoelectric properties of some materials with multicenter anisotropic bonds is given in.…”

Electronic and Optical Properties of Heterostructures based on Indium Chalcogenides

“…29 eV [16]) and accordingly it is characterized by higher photosensitivity [1,17]. Recently in [1,2] it was found that the heterostructures based on In 4 Se 3 and In 4 Te 3 and their solid solutions, which have been obtained by the liquid epitaxy and laser solid restructuring, are new materials for infrared technology.…”

“…Recently in [1,2] it was found that the heterostructures based on In 4 Se 3 and In 4 Te 3 and their solid solutions, which have been obtained by the liquid epitaxy and laser solid restructuring, are new materials for infrared technology. They are photosensitive in the spectral range 1.0−2.0 µm at room temperature.…”

“…As it was * corresponding author; e-mail: lkharkhalis@gmail.com shown in our previous article [11], the strain can drastically change not only lattice parameters of connected materials but also their energy parameters. Despite experimental fabrications of the heterostructures on the base of the indium chalcogenides [1][2][3], theoretical investigations of electronic structure are almost absent today.…”

“…In this context, the semiconductor compounds of the In-Se system and their solid solutions are used for the production of the photosensitive elements on the basis of the homo-and heterojunctions, which have been obtained by van der Waals epitaxy method and laser restructuring [1][2][3]. The formation of the In 4 Se 3 /In 4 Te 3 and β-InSe/In 4 Se 3 heterostructures leads to widening of the spectral sensitivity range of the photoelements.…”