Elevated thermoelectric figure of merit of n-type amorphous silicon by efficient electrical doping process

Banerjee, Debashree; Vallin, Örjan; Samani, Kabir Majid; Majee, Subimal; Zhang, Shi-Li; Liu, Johan; Zhang, Zhibin

doi:10.1016/j.nanoen.2017.11.060

Cited by 16 publications

(17 citation statements)

References 30 publications

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“…Based on the aforementioned thermal conductivity data range, the 5 s UHA samples achieved excellent ZT values of 0.8 at room temperature, which is amongst the highest ever reported Si‐based thin film and nanowires, and the ZT comparison diagram is shown in Figure S7 in the Supporting Information. [ 55–57 ] Particularly striking, compared with reported TE materials of silicon‐based and other state of art films, the power factor of our QDs hybrid film exhibits is superior to that of conventional silicon‐based, bismuth telluride based, and other representatives high performance thermoelectric films, [ 47,55–60 ] as given in Figure 5d.…”

Section: Discussionmentioning

confidence: 65%

“…For Si‐based TE materials, ion implantation process has been proved to reduce κ by defect engineering, [ 61 ] increasing σ via heavy doping and carrier mobility enhancement effect, [ 62 ] enhancing S through the effect of amorphization. [ 55 ] Consequently, the optimal energies and doses were simulated of P‐ion by using the stopping and range ion matter (SRIM) program. The P‐ion dose implanted into the Si 1− x − y Ge x Sn y layers were 2–4 × 10 15 atoms /cm 2 and the designed doping concentrations were 2–4 × 10 20 /cm 3 with ion depth range of ≈100 nm (Figure S2a, Supporting Information), respectively.…”

Section: Methodsmentioning

confidence: 99%

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Constructed Ge Quantum Dots and Sn Precipitate SiGeSn Hybrid Film with High Thermoelectric Performance at Low Temperature Region

Peng

Liu

et al. 2021

Advanced Energy Materials

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SiGe‐based thermoelectric (TE) materials are well‐known for high‐temperature utilization, but rarely relevant in the low temperature region. Here a Ge quantum dots (QDs) and Sn precipitation SiGeSn hybrid film are constructed via ultrafast high temperature annealing (UHA) of a treated P‐ion implantation SiGeSn film on Si/SiO2 substrate. Combining the modulation doping effect dominated by Sn precipitates and the energy filtering effect caused by Ge QDs, the optimized SiGe films achieve a giant power factor as high as 91 µW cm−1 K−2 @300 K, room temperature, while maintaining low thermal conductivity. This strategy on film construction provides a novel insight for TE materials with striking performance.

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Section: Discussionmentioning

confidence: 65%

Section: Methodsmentioning

confidence: 99%

Constructed Ge Quantum Dots and Sn Precipitate SiGeSn Hybrid Film with High Thermoelectric Performance at Low Temperature Region

Peng

Liu

et al. 2021

Advanced Energy Materials

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“…We have obtained a PF of ∼3.4 m Wm −1 K −2 at RT using arsenicdoped n-type a-Si thin films processed at ∼500 °C. 13 For p-type Si, a PF > 1 m Wm −1 K −2 has been reported for boron-doped Si thin films which have been treated at rather a high temperature (1000 °C for hours) for the recovery of implantation damages and for dopant activation. 11 It has been well known that the crystallization of a-Si is very sensitive to annealing temperature and duration.…”

Section: Introductionmentioning

confidence: 97%

“…Recently, it becomes an attractive solution to engineer amorphous silicon (a-Si) thin films using standard silicon technology to obtain high PF silicon. 13 To construct a TEG, n-and p-type constituents of equal performance are crucial. We have obtained a PF of ∼3.4 m Wm −1 K −2 at RT using arsenicdoped n-type a-Si thin films processed at ∼500 °C.…”

Section: Introductionmentioning

confidence: 99%

High thermoelectric power factor of p-type amorphous silicon thin films dispersed with ultrafine silicon nanocrystals

Pham

Vallin

Panda

et al. 2020

Journal of Applied Physics

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Silicon, a candidate as an abundant-element thermoelectric material for low-temperature thermal energy scavenging applications, generally suffers from rather low thermoelectric efficiency. One viable solution to enhancing the efficiency is to boost the power factor (PF) of amorphous silicon (a-Si) while keeping the thermal conductivity sufficiently low. In this work, we report that PF >1 m Wm −1 K −2 is achievable for boron-implanted p-type a-Si films dispersed with ultrafine crystals realized by annealing with temperatures ≤600 °C. Annealing at 550 °C initiates crystallization with sub-5-nm nanocrystals embedded in the a-Si matrix. The resultant thin films remain highly resistive and thus yield a low PF. Annealing at 600 °C approximately doubles the density of the sub-5-nm nanocrystals with a bimodal size distribution characteristic and accordingly reduces the fraction of the amorphous phase in the films. Consequently, a dramatically enhanced electrical conductivity up to 10 4 S/m and hence PF > 1 m Wm −1 K −2 measured at room temperature are achieved. The results show the great potential of silicon in large-scale thermoelectric applications and establish a route toward high-performance energy harvesting and cooling based on silicon thermoelectrics.

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“…Upon annealing, the grown-in SiH monohydride groups are partially transformed into SiH2 dihydrides and polysilane chains which have been reported to impair the performance of a-Si:H based PV/T devices [26]. Compared with c-Si cells, a-Si cells are more suitable for operating at the medium-high temperature, and are promising in solar roof [27][28][29], PV glazing [30] and photovoltaic-thermoelectric [31][32][33][34] applications. So far, there have been a few reports on the experimental study of a-Si PV systems such as a-Si PV windows which can provide daylight illuminance and electricity generation simultaneously [35][36] and a-Si PV walls [37].…”

Section: Introductionmentioning

confidence: 99%

Experimental study on a novel photovoltaic thermal system using amorphous silicon cells deposited on stainless steel

Yuan

et al. 2018

Energy

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Amorphous silicon (a-Si) cells are able to perform better as temperature increases due to the effect of thermal annealing. a-Si cells have great potential to solve or ease the problems of high power temperature coefficient, large thermal stress caused by temperature fluctuation and gradient, and thick layer of conventional crystalline silicon cell-related photovoltaic/thermal (PV/T) collectors. In this paper, an innovative a-Si PV/T system is developed. It is the first time that a-Si cells deposited on stainless steel have been used in a practical PV/T system. The system comprises of two PV/T collectors. In each collector, there are 8 pieces of solar cells in series. Long-term outdoor performance has been monitored.Experimental results on the thermal efficiency ( ℎ ), electrical efficiency () and I-V characteristic are presented. The peak instantaneous ℎ, was about 42.49% with the maximum , of 5.92% on April 2, 2017. The daily average ℎ, and , were 32.8% and

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Elevated thermoelectric figure of merit of n-type amorphous silicon by efficient electrical doping process

Cited by 16 publications

References 30 publications

Constructed Ge Quantum Dots and Sn Precipitate SiGeSn Hybrid Film with High Thermoelectric Performance at Low Temperature Region

Constructed Ge Quantum Dots and Sn Precipitate SiGeSn Hybrid Film with High Thermoelectric Performance at Low Temperature Region

High thermoelectric power factor of p-type amorphous silicon thin films dispersed with ultrafine silicon nanocrystals

Experimental study on a novel photovoltaic thermal system using amorphous silicon cells deposited on stainless steel

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