Eliminating the “decoupling” effect of fluorescence intensity ratio thermometry for an upconversion pumped system

Qin, Feng; Zhao, Hua; Lv, Moyang; Zhou, Yuan; Li, Leipeng; Wang, Zhengjia; Zheng, Yangdong; Zhang, Zhiguo; Cao, Wenwu

doi:10.1016/j.jlumin.2017.06.018

Cited by 1 publication

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“…We believe that this is probably partially due to the increased absorption of the system at 78 K compared to 300 K, enabling higher inversion levels. We also believe that, the fast initial decay of fluorescence signal is potentially due to (i) the redistribution of energy from the higher lying laser level of the Yb +3 ion ( 2 F5/2 level) into the other rare earth impurity ions via upconversion mechanism [55][56][57], and/or (ii) amplified spontaneous emission mechanism that becomes effective at very high inversion levels (gain increases at lower temperatures, which might also fasten the ASE process) [48,49]. For our case, since the expected level of impurities are quite low (as it will be discussed in the next section), the ASE process is most probably the dominant mechanism in the observed behavior, which underlines the importance of detailed ASE analysis for successful design of Yb:YLF thindisk and slab lasers/amplifiers.…”

Section: Intensity Dependence Of Fluorescence Lifetime In the 25% Ybdoped Ylf Samplementioning

confidence: 99%

Temperature and doping dependence of fluorescence lifetime in Yb:YLF (role of impurities)

et al. 2021

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We have investigated temperature and doping dependence of fluorescence lifetime in Yb:YLF crystals in the 78-300 K range, for samples with Yb-doping levels of 0.5%, 1 % and 25%. Radiation-trapping prolonged fluorescence lifetimes are first measured to understand the pros and cons of this inevitable process on fractional thermal load and laser gain. Later, pinhole method was used to acquire ideally trapping free fluoresce lifetimes. For the lowly Yb-doped samples, fluorescence lifetime was measured to be 1.97 ms and 2.1 ms at 78 K and 300 K, respectively. For the 25% Yb-doped sample, strong upconversion emission due to the presence of Er, Tm and Ho impurities were observed. A doubleexponential decay behavior, combined with excitation intensity dependent decay profile was also revealed for this highly doped sample. Even with the pinhole method, the 300 K fluorescence lifetimes was measured as 4.5 ms, showing the difficulty to acquire radiation-trapping free signals at high doping levels. Time dynamics of upconverted emission in different spectral regions were also recorded, which provides hints on the energy transfer mechanisms between the Yb ion and the other rare-earth impurities.

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Section: Intensity Dependence Of Fluorescence Lifetime In the 25% Ybdoped Ylf Samplementioning

confidence: 99%

Temperature and doping dependence of fluorescence lifetime in Yb:YLF (role of impurities)

et al. 2021

View full text Add to dashboard Cite

show abstract

Eliminating the “decoupling” effect of fluorescence intensity ratio thermometry for an upconversion pumped system

Cited by 1 publication

References 15 publications

Temperature and doping dependence of fluorescence lifetime in Yb:YLF (role of impurities)

Temperature and doping dependence of fluorescence lifetime in Yb:YLF (role of impurities)

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