2024
DOI: 10.1039/d3ee03550f
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Elimination of charge accumulation by a self-assembled cocrystal interlayer for efficient and stable perovskite solar cells

Xueying Wang,
Yang Zhong,
Xiao Luo
et al.

Abstract: A SAM-CL has been introduced in n–i–p perovskite solar cells to optimize interfacial energy level arrangement and eliminate interfacial charge accumulation. The large pyrene rings and F atoms of SAM-CL inhibit severe ion migration and moisture erosion, thus improving device stability.

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Cited by 10 publications
(3 citation statements)
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“…Moreover, we observed a higher carrier mobility and lower trap-filled limited voltage when the FcP 2 molecule was introduced into the Spiro-OMeTAD (Figure S12). The improved interfacial carrier extraction would slow down the charge accumulation at the electron transport layer, which is beneficial for more balanced carrier transport in the device . To confirm this hypothesis, an electron-only device was fabricated and exhibited a similar trend, where the V TFL values of the FcP 2 -treated and control devices were 0.164 and 0.307 V, respectively.…”
Section: Resultsmentioning
confidence: 87%
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“…Moreover, we observed a higher carrier mobility and lower trap-filled limited voltage when the FcP 2 molecule was introduced into the Spiro-OMeTAD (Figure S12). The improved interfacial carrier extraction would slow down the charge accumulation at the electron transport layer, which is beneficial for more balanced carrier transport in the device . To confirm this hypothesis, an electron-only device was fabricated and exhibited a similar trend, where the V TFL values of the FcP 2 -treated and control devices were 0.164 and 0.307 V, respectively.…”
Section: Resultsmentioning
confidence: 87%
“…The improved interfacial carrier extraction would slow down the charge accumulation at the electron transport layer, which is beneficial for more balanced carrier transport in the device. 23 To confirm this hypothesis, an electron-only device was fabricated and exhibited a similar trend, where the V TFL values of the FcP 2 -treated and control devices were 0.164 and 0.307 V, respectively. Correspondingly, the FcP 2 -treated device displays a lower defect density (3.41 × 10 17 cm −3 ) and slightly greater carrier mobility (9.64 × 10 −3 cm 2 V −1 s −1 ) than the control device (6.37 × 10 17 cm −3 and 8.30 × 10 −3 cm 2 V −1 s −1 ) (Figure 5a).…”
Section: Resultsmentioning
confidence: 88%
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