2011
DOI: 10.1063/1.3540646
|View full text |Cite
|
Sign up to set email alerts
|

Elimination of interface states of Co2MnSi/MgO/Co2MnSi magnetic tunneling junction by inserting an Al atomic layer

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4
1

Citation Types

1
14
0

Year Published

2012
2012
2024
2024

Publication Types

Select...
7

Relationship

0
7

Authors

Journals

citations
Cited by 12 publications
(15 citation statements)
references
References 15 publications
1
14
0
Order By: Relevance
“…Both for artifical multilayered magnetic structures and naturally occuring "layers" such as free surfaces, one often wishes to measure the magnetic behavior with both elemental and depth specificity. To give recent examples, magnetite (001) surfaces terminated with a monolayer of H retain their bulk-like spin polarization (SP) far more readily than the unpassivated surface [8], while the Co 2 MnSi-MgO interface could be rendered free of minority spin interface states by the insertion of an atomic layer of Al in a particular layer ordering [9]. Such effects can only be studied in isolation by experimental techniques with appropriate depth sensitivity or elemental specificity.…”
Section: Introductionmentioning
confidence: 99%
“…Both for artifical multilayered magnetic structures and naturally occuring "layers" such as free surfaces, one often wishes to measure the magnetic behavior with both elemental and depth specificity. To give recent examples, magnetite (001) surfaces terminated with a monolayer of H retain their bulk-like spin polarization (SP) far more readily than the unpassivated surface [8], while the Co 2 MnSi-MgO interface could be rendered free of minority spin interface states by the insertion of an atomic layer of Al in a particular layer ordering [9]. Such effects can only be studied in isolation by experimental techniques with appropriate depth sensitivity or elemental specificity.…”
Section: Introductionmentioning
confidence: 99%
“…The shift field is defined as H S ¼ (H S1 À H S2 )/2, where H S1 and H S2 denote the fields where sub-loops separated by the plateaus are symmetric around at positive and negative fields along [110] direction (see Figure 6(a), left column, for clarity), respectively. For the MgO/CMS/Cr//MgO(001) film with t CMS ¼ 92.72 nm, sub-loops are barely distinguishable with our MOKE setup and magnetic curves with H applied along [110] and [1][2][3][4][5][6][7][8][9][10] axes superimpose into a square loop with coercive field (H C ) value of $6 Oe, as can be seen in Figure 6(b) (left). On the contrary, Table I shows that H S value increases as t CMS decreases for samples with t CMS 66.76 nm.…”
Section: Buffer Mgomentioning
confidence: 88%
“…M(H) curves for films directly deposited on MgO reveal an in-plane magnetic anisotropy with the easy axis oriented along [110] MgO , i.e., along the [100] axis of the Heusler alloy. The expected four fold anisotropy due to epitaxial growth is found to be superimposed to an additional uniaxial magnetic anisotropy with the easyaxis along the MgO [1][2][3][4][5][6][7][8][9][10] in-plane direction. Indeed, when the external magnetic field is applied along the [110] axis, the longitudinal magnetization switches in two defined Barkhausen jumps separated by an intermediate plateau (see Fig.…”
Section: Buffer Mgomentioning
confidence: 99%
See 2 more Smart Citations