Elimination of Microtrenching in Trenches in 4H-Silicon Carbide Using Shadow Masking

Mohammadi, Z.; Shah, V. A.; Jennings, Michael R.; Fisher, C; Mawby, P.A.

doi:10.4028/www.scientific.net/msf.821-823.533

Cited by 6 publications

(1 citation statement)

References 4 publications

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“…Dry etching of silicon can lead to unwanted features such as striations along trench walls and micro-trenches in the base of a trench due to limitations in UV photolithography and imperfect dry etching processes [17]. Annealing the trenches in H 2 modifies the imperfect profile of the mesa walls, giving them a smooth surface, and thereby eliminates these features.…”

Section: Annealing Of Si Trenchesmentioning

confidence: 99%

Three-Dimensional Epitaxy of Low-Defect 3C-SiC on a Geometrically Modified Silicon Substrate

Colston,

Turner,

Renz

et al. 2024

Materials

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We demonstrate the growth of 3C-SiC with reduced planar defects on a micro-scale compliant substrate. Heteroepitaxial growth of 3C-SiC on trenches with a width and separation of 2 µm, etched into a Si(001) substrate, is found to suppress defect propagation through the epilayer. Stacking faults and other planar defects are channeled away from the center of the patterned structures, which are rounded through the use of H2 annealing at 1100 °C. Void formation between the columns of 3C-SiC growth acts as a termination point for defects, and coalescence of these columns into a continuous epilayer is promoted through the addition of HCl in the growth phase. The process of fabricating these compliant substrates utilizes standard processing techniques found within the semiconductor industry and is independent of the substrate orientation and offcut.

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Section: Annealing Of Si Trenchesmentioning

confidence: 99%

Three-Dimensional Epitaxy of Low-Defect 3C-SiC on a Geometrically Modified Silicon Substrate

Colston,

Turner,

Renz

et al. 2024

Materials

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Epitaxial trench refill of 4H-SiC by chlorinated chemistry

Colston,

Turner,

Renz

et al. 2024

Applied Physics Letters

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Trench epitaxy of 4H-SiC is investigated with the supersaturation of chlorinated chemistry at a growth temperature of 1550 °C. Coupled with a lower growth temperature than has been previously reported, the integrity of the 4H-SiC trenches is retained and minimal rounding effects of H2 annealing prior to growth are observed. The system gives different growth rates of materials on the various crystal faces of the trenches and can be used to improve the refilling process, resulting in the reduced void formation. The addition of excessive levels of HCl can suppress trench epitaxy by reducing the growth rate on the sidewalls of trenches in favor of growth on the surface. The processes demonstrated offer a scalable and reproducible method to fabricate SiC-based superjunction device structures for applications in high voltage power electronics.

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Investigation of Etching SIC VIAS for High Power Elctronics and Harsh Enviornment Mems

Mackowiak

Erbacher

Schiffer

et al. 2020

2020 IEEE 8th Electronics System-Integration Technology Conference (ESTC)

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Elimination of Microtrenching in Trenches in 4H-Silicon Carbide Using Shadow Masking

Cited by 6 publications

References 4 publications

Three-Dimensional Epitaxy of Low-Defect 3C-SiC on a Geometrically Modified Silicon Substrate

Three-Dimensional Epitaxy of Low-Defect 3C-SiC on a Geometrically Modified Silicon Substrate

Epitaxial trench refill of 4H-SiC by chlorinated chemistry

Investigation of Etching SIC VIAS for High Power Elctronics and Harsh Enviornment Mems

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