2009
DOI: 10.1016/j.tsf.2008.12.051
|View full text |Cite
|
Sign up to set email alerts
|

Ellipsometric analysis of porous anodized aluminum oxide films

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

0
12
0

Year Published

2012
2012
2022
2022

Publication Types

Select...
8
1

Relationship

0
9

Authors

Journals

citations
Cited by 17 publications
(12 citation statements)
references
References 14 publications
0
12
0
Order By: Relevance
“…Spectroscopic ellipsometry has been one of the effective, contactless, and nondestructive methods used for the determination of the RI of NAA [187][188][189]. The advantages of ellipsometry mainly stem from the fact that ellipsometry gives a direct measurement of the dielectric response from two experimental parameters (ψ, ∆), without the need of Kramers-Kronig transformation [190]. Moreover, ellipsometry provides high precision Å level resolution even with the multilayer structures.…”
Section: Naa As a Host Materialsmentioning
confidence: 99%
“…Spectroscopic ellipsometry has been one of the effective, contactless, and nondestructive methods used for the determination of the RI of NAA [187][188][189]. The advantages of ellipsometry mainly stem from the fact that ellipsometry gives a direct measurement of the dielectric response from two experimental parameters (ψ, ∆), without the need of Kramers-Kronig transformation [190]. Moreover, ellipsometry provides high precision Å level resolution even with the multilayer structures.…”
Section: Naa As a Host Materialsmentioning
confidence: 99%
“…Mechanically stable anodized membranes are usually thick , resulting in very high aspect ratios that significantly compromise on efficient mass flow across the membrane, hindering its potential as separation media. The successful anodization of metallic films deposited on Si wafers and even glass has been reported, which increases the versatility of anodized materials since it expands the processing catalog to conventional silicon technologies. The fabrication process reported by Okada et al .…”
Section: Anodizationmentioning
confidence: 99%
“…For angle dependent reections, one would need to take into account individual polarization components 39 and the anisotropy of the AAO layer. 36,40,41 The reection attenuation from the entire system can be found by calculating the ratio of the electric elds E 0À /E 0+ at the rst surface z 0 ¼ 0, using matching and propagation matrices. 42 Each spectrum contains multiple attenuation maxima (Fig.…”
Section: Spectral Propertiesmentioning
confidence: 99%