The
pressure dependence of the direct and indirect bandgap transitions
of hexagonal boron nitride is investigated using optical reflectance
under hydrostatic pressure in an anvil cell with sapphire windows
up to 2.5 GPa. Features in the reflectance spectra associated with
the absorption at the direct and indirect bandgap transitions are
found to downshift with increasing pressure, with pressure coefficients
of −26 ± 2 and −36 ± 2 meV GPa
–1
, respectively. The
GW
calculations yield a faster
decrease of the direct bandgap with pressure compared to the indirect
bandgap. Including the strong excitonic effects through the Bethe–Salpeter
equation, the direct excitonic transition is found to have a much
lower pressure coefficient than the indirect excitonic transition.
This suggests a strong variation of the binding energy of the direct
exciton with pressure. The experiments corroborate the theoretical
predictions and indicate an enhancement of the indirect nature of
the bulk hexagonal boron nitride crystal under hydrostatic pressure.