Elliptic Diaphragm Capacitive Pressure Sensor and Signal Conditioning Circuit Fabricated in SiGe CMOS Integrated MEMS

Sundararajan, Ananiah Durai; Hasan, S. M. Rezaul

doi:10.1109/jsen.2014.2367416

Cited by 21 publications

(9 citation statements)

References 27 publications

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“…However, as per best of our literature review, no mathematical modelling and numerical simulation of clamped elliptical shaped capacitive pressure sensor is capacitive pressure sensor. The simulation and fabrication of L-shaped clamped elliptical capacitive pressure sensor, with signal conditioning circuitry, have been reported [14]. The finite element analysis (FEA) of elliptical shaped capacitive pressure sensor, with temperature variation, has been reported [15].…”

Section: Paper Structurementioning

confidence: 99%

Mathematical Modelling and Comparative Study of Elliptical and Circular Capacitive Pressure Microsensor

Mishra

Kumar

2019

J. Phys.: Conf. Ser.

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A lot of work on clamped circular, square and rectangular shaped capacitive pressure sensor has been carried out. However, to the best of our knowledge, no elaborate work has been performed on mathematical formulation and simulation of clamped elliptical shaped capacitive pressure sensor in literature. This paper describes the mathematical modelling and simulation of normal mode clamped elliptical shaped capacitive pressure sensor. The study of various performance parameters like maximum diaphragm deflection, capacitance variation, mechanical sensitivity, capacitive sensitivity and non-linearity is also carried out for operating pressure range of 0kPa -18 kPa. For circular capacitive pressure sensor, the operating pressure range is modified according to physical dimensions i.e. thickness and radius of diaphragm, separation gap between plates and maximum deflection. For same overlapping area between plates (10000 mm 2 ), the comparison of elliptical shapes of different eccentricities with circular shape diaphragm is carried out. The thickness of diaphragm is taken as2 µm and separation gap is 1 µm in all the designs which are used in this work. In this comparative study, it is observed that elliptical shaped capacitive pressure sensors have better linearity than circular diaphragm pressure sensor.

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Section: Paper Structurementioning

confidence: 99%

Mathematical Modelling and Comparative Study of Elliptical and Circular Capacitive Pressure Microsensor

Mishra

Kumar

2019

J. Phys.: Conf. Ser.

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“…For force measurements and in case of Atomic Force Microscopy (AFM), high aspect ratio cantilever structures are used for optimal results when compared to low aspect ratio cantilevers [7]. Other than piezo-resistive deflection detection method, capacitive and optical methods can be used to sense pressure [8][9][10]. Optical detection methods have the advantage of detecting deflection at sub-nanometer range, but the disadvantage is that external opto-electronic set up such as laser source and position sensitive detector are needed which tends to be extremely expensive [11].…”

Section: Introductionmentioning

confidence: 99%

“…The orientation of the p-type piezo-resistors along <110> direction of <100> Silicon wafer during bulk micro manufacturing contributes to improved sensitivity [14]. Notably, an elliptic diaphragm capacitive pressure sensor achieved wider low pressure sensing range at lower supply voltage compared to commercial pressure sensors and MEMS pressure sensor was successfully fabricated and characterized for high sensitivity [8]. In this regard, the various design considerations for diaphragm based and SOI integration for silicon piezo-resistive pressure sensor are elaborated in detail.…”

Section: Introductionmentioning

confidence: 99%

Robust Design of Horn Shaped Piezo-Resistive Mems Pressure Sensor

Kumar

2018

International Journal of Simulation: Systems, Science &Amp; Technology

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The effective use of Micro Electro Mechanical Systems (MEMS) based cantilever sensor is application dependent and it is revolutionary for sensing pressure with improved sensitivity at modest fabrication design in research oriented projects. Micrometer scale piezo-resistive cantilever pressure sensors of two different shapes are modeled by using Bulk and Surface micromachining techniques on the Intellisuite simulation software. The layout of the Piezo-resistors is aligned along <110> orientation of p-type Silicon substrate with Aluminum interconnect to form a Wheatstone bridge configuration where output voltage is read out. A comparative study on different parameters such as displacement, von-mises stress and output voltage for the applied pressure is done by simulation, for the two different shapes of cantilever beams. The sensitivity of rectangular shaped sensor is 111mV/MPa. The sensitivity of horn shaped sensor is 185mV/MPa which is notably higher. This sensor can be used to measure contact pressure between surgical tool and organs during the surgery and for manipulation of living cells.

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“…Sundararajan et. al [10] developed a CMOS integrated capacitive pressure sensor, fabricated in 0.18 um SiGe MEMS process, with the sensor held and linked to the CMOS beneath. The 0.56 mm 2 elliptic structured diaphragm was characterized over a pressure range of 10 to 100 kPa and has shown a wider pressure sensing range at a lower supply voltage compared to commercial pressure sensors.…”

Section: Introductionmentioning

confidence: 99%