Embedded Effective-Index-Material in Oxide-Free Hybrid Silicon Photonics Characterized by Prism Deviation

Abstract

International audienc

PT-symmetry of multimode waveguides: A tool for multichannel communication

“…To add gain or loss to such a system, one could recourse to hybrid oxyde-free bonded silicon/3-5 structures [15,16] operating with gain from the InP-based 3-5 for instance. We use 2N = 6 stripes as in Fig.…”

Broad working bandwidth and “endlessly” single-mode guidance within hybrid silicon photonics

“…We can now wonder whether we can compensate also for the vertical swelling (as well as manage dispersion) by getting closer to the original fiber endlessly single-mode concept: to this end we cannot afford a thicker silicon (a vertical TE1 mode would appear), but we can attempt to surround the central core by "allowed modes" in the z-direction as well, not only in the SOI xy plane. This is similar to the low-index "horizontal slot" of [5][6][7], albeit with less index contrast: this option is made possible in the moderate index contrast regime by the advent of hybrid oxide-free InP-on-Si silicon photonics, whereby bonding of a III-V heterostructure (InP-based) to nanostructured silicon has been demonstrated [20,21].…”

“…In Fig. 2(a), we fill the grooves with a composite air-silicon material of index n EMTd λ, EMT referring to "effective material theory" [8,[20][21][22], and d to "dispersive": a broad range of indices can be made by nano-pattering silicon at modestly sub-wavelengths scales. We refer for simplicity to these dispersive media by the index n EMT for n Si 3.5 exactly 3.5 n Si 1.343 μm, i.e., we use n EMTd λ 1 n EMT − 1n Si λ − 1∕3.5 − 1 with fixed n EMT .…”