Advances in Embedded and Fan‐Out Wafer‐Level Packaging Technologies 2019
DOI: 10.1002/9781119313991.ch8
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Embedded Silicon Fan‐Out (eSiFO®) Technology for Wafer‐Level System Integration

Daquan Yu
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Cited by 8 publications
(2 citation statements)
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“…The CPU time was about 4 min for the 3.3GHz processor; difference grid in horizontal plane was 400×400. Comparison of curves 1 and 2 shows the good agreement between results from paper [9] and results calculated using Quasi-3D-Overheat tool. In Figure 11 the temperature distribution on the die is shown.…”
Section: Embedded Silicon Fan-out (Esifo) Structuresupporting
confidence: 54%
See 1 more Smart Citation
“…The CPU time was about 4 min for the 3.3GHz processor; difference grid in horizontal plane was 400×400. Comparison of curves 1 and 2 shows the good agreement between results from paper [9] and results calculated using Quasi-3D-Overheat tool. In Figure 11 the temperature distribution on the die is shown.…”
Section: Embedded Silicon Fan-out (Esifo) Structuresupporting
confidence: 54%
“…The schematic view of the considered DUT is presented in Figure 9 [9]. The main advantage of the eSiFO package is that the silicon carrier is used as the fan-out area instead of molding compound.…”
Section: Embedded Silicon Fan-out (Esifo) Structurementioning
confidence: 99%