Double heterostructure (DH) and quantum well (QW) EuSe/PbSe/Pb 1 edge-emitting laser structures on Si substrates are grown by molecular-beam epitaxy. They operate up to 250 K when pumped with 870 nm low-cost laser diodes with peak powers of ~7 W, and emit up to 200 mW peak output power at ~s µm wavelength. Differential quantum efficiencies are up to 20%. The threshold powers are limited by Shockley-Read recombination due to the high dislocation densities (10 8 cm-2) in the active layers. Nearly similar maximum operation temperatures were observed when employing (111)-instead of (100)-oriented layers, as well when using QW rather than DH structures. Reduction of dislocation densities to 10 7 cm-z is feasible and will lead to nearly an order of magnitude lower tlu•eshold powers.