Emergence of half metallicity in Cr-doped GaP dilute magnetic semiconductor compound within solubility limit

Half-metallic ferromagnetic properties of Cr- and V-doped AlP semiconductors

“…Recently, extensively studies have been investigated to control the properties of (DMS)s as Ti-doped AlP [5], Ca doped AlP [6], Cr doped AlP [7], Ga 1−x Mn x N and Ga 1−x Mn x As [8], p-type (Ga, Fe)N [9], V doped AlN [10], Cr-doped GaP [11], V-doped GaN [12], V-doped GaN [13], Mn-doped III-V [14], doped GaAs (Zinc Blende) [15], Ga 1-x Mn x P and Ga 1-x Mn x As [16], V-doped GaN [17], Cr-doped AlP [18], Cu -doped ZnO [19].…”

Generating magnetic response and half-metallicity in GaP via dilute Ti-doping for spintronic applications

“…Right from the discovery of half metallicity in semi Heusler alloy by de Groot et al [1], a lot of attentions were paid to analyze the electronic and magnetic properties of different types materials in order to search new half-metallic ferromagnets [2][3][4][5][6][7][8][9][10]. Among these materials, DMSs are the most promising materials for the spintronic devices as these can be characterized as true half metallic ferromagnets with 100% spin polarization at Fermi level (E F ) after suitable doping with appropriate atom.…”

“…After that a lot of efforts were made for the synthesis of ferromagnetic semiconductors in the past decades [2][3][4][5]. In the last few years, the research on TM doped III-V DMSs have been extended in order to predict the high Curie temperature (T C ), improved ferromagnetic properties and to explore the mechanism behind the half metallic ferromagnetism (HMF) [10,[16][17][18][19]. In the category of III-V semiconductors, GaP is an important material which characterizes in cubic Zinc Blende (ZB) structure and can be used in wide variety of electronic equipments such as optoelectronic devices, cellular phones and semiconductors lasers etc.…”

“…GaP is considered as a suitable host material to make DMS compounds after doping with TMs as justified by the some theoretical and experimental reports [10,[20][21][22][23][24][25]. The optical absorption and photoluminescence spectra of Ti-doped GaP measured at various magnetic field values at T = 2K by Halliday et al [20].…”

First-principles investigation on the magnetism of low-concentration 3d (Cr, Mn, Fe Co, Ni)-doped BeTe semiconductors

“…From the time that NiMnSb was first predicted by Groot et al [2], researchers have predicted theoretically and/or synthesized experimentally many HM ferromagnets, which have found wide applications in spintronics [3]. In diluted magnetic semiconductors (DMS), in which a very small amount of magnetic atoms replace some of the nonmagnetic cations in the host lattice [4,5], HM property has also been observed.…”