“…The tremendous advancement in thin film growth technologies over the last two decades have enabled the research community to grow artificial structures of these complex oxides with unit cell precision [5][6][7][8][9][10][11]. Such heterostructuring [9,[12][13][14][15][16][17][18][19][20][21][22][23][24][25] leads to subtle modifications in spin, charge, orbital, and lattice sectors at the interface, resulting in a variety of emergent magnetic behaviors such as interfacial ferromagnetism, exchange bias, spin spiral magnetic phase, enhanced magnetic ordering temperature, topological Hall effect (THE), etc. THE arises in materials with non-zero scalar spin chirality [𝜒 𝑖,𝑗,𝑘 = 𝑺 𝒊 .…”