2015
DOI: 10.4236/jemaa.2015.712032
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EMF of Hot Charge Carriers Arising at the p-n-Junction under the Influence of the Microwave Field and Light

Abstract: It is shown that the increase in the current of an asymmetric p-n-junction, caused by perturbation of potential barrier height and increasing recombination current in a strong microwave field, is suppressed by light generated photo carriers, leading to the displacement of current-voltage characteristics of p-n-junction into the direction of smaller current values.

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Cited by 4 publications
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“…For example, the physical processes that take place in a semiconductor in high-frequency oscillations are subject to the relevant laws due to the composition of the material. [14]It is known that there are two types of conductivity: electron and ion. Metals have electronic conductivity.…”
Section: Introductionmentioning
confidence: 99%
“…For example, the physical processes that take place in a semiconductor in high-frequency oscillations are subject to the relevant laws due to the composition of the material. [14]It is known that there are two types of conductivity: electron and ion. Metals have electronic conductivity.…”
Section: Introductionmentioning
confidence: 99%