EMI Characterisation of high power IGBT modules for Traction Application

Busatto, G.; Abbate, Carmine; Iannuzzo, Francesco; Fratelli, L.; Cascone, B.; Giannini, G.

doi:10.1109/pesc.2005.1581935

Cited by 24 publications

(17 citation statements)

References 6 publications

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“…The high frequency IGBT module behaviour found by experimental measurements can be explained by an appropriate device model that accounts for the high frequency parasitic elements. The IGBT module model proposed here is an evolution of the model proposed in [3].…”

Section: High Frequency Igbt Module Modelmentioning

confidence: 99%

“…All internal connections constitute stray inductances which may resonate with internal equivalent capacitances, that generates, during the commutations, some oscillating noise components. Moreover, the IGBT module includes in the same case the reverse recovery diode which is still parallel connected and acts as a parasitic variable voltage capacitance [3]. Starting from these considerations, we can propose the IGBT radio frequency model of Figure 6 that describes its frequency behaviour by means of lumped elements.…”

Section: High Frequency Igbt Module Modelmentioning

confidence: 99%

“…These oscillations are recognized to be the main cause of EMI (Electro Magnetic Interferences) emission and, in some circumstances, they have been recognized to cause a significant reduction of the converter reliability [1]. The high frequencies oscillations can be mainly attributed to the IGBT internal capacitances and inductances stray elements [2] that, suitably stimulated, can resonate both internally to the module and with the external circuit [3,4]. In particular it was found that the main stimulus to the electromagnetic noise emission is attributed to the voltage gradients [3].…”

Section: Introductionmentioning

confidence: 99%

“…In order to predict and reduce the EMI in power converter, it is very important to analyse the noise oscillations under different electrical IGBT module conditions that can be experienced during the normal device operations. For this reasons, a model for high frequency behaviour of IGBT modules was presented [3], which however is not able to include their amplification effect. This effect was found to play a major role in causing electrical instabilities of the current sharing among the chips of the module [2].…”

Section: Introductionmentioning

confidence: 99%

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High Frequency Behavior of High Power IGBT Modules

Abbate¹,

Folco²

2015

ujeee

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Sharp voltage gradients act as a stimulus for high power IGBT modules, which can exhibit a potentially instable high frequency behaviour. In effect, they can act as a radio frequency (RF) amplifier and under certain operating conditions the interaction between the device and the control or the external circuit can cause self-sustaining oscillations or the enhancement of the unevenness in current distribution inside a power module and that can have a significant impact on the reliability of the power converter. Moreover, this RF amplification worsen the generated EMI (Electro Magnetic Interference). This paper presents an extensive experimental investigation about the high frequency behaviour of IGBT high power modules. Measurements were performed by an original experimental set-up that was specifically conceived and constructed. Data were analysed with the help of a theoretical small signal model which was able to describe RF behaviour of high power IGBT modules.

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Section: High Frequency Igbt Module Modelmentioning

confidence: 99%

Section: High Frequency Igbt Module Modelmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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High Frequency Behavior of High Power IGBT Modules

Abbate¹,

Folco²

2015

ujeee

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“…1). Hence equations (1) & ( 2) d behaviour [7][8][9]. Each protective switch in the circuit according to the operating sequence of the failure and taking into account the wor conditions.…”

Section: Transient Analymentioning

confidence: 99%

Design and test of a high power IGBT non-destructive tester

Ahmed

Castellazzi

Coulbeck

et al. 2012

2012 IEEE International Symposium on Industrial Electronics

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The study proposes the primary design and transient analysis of an IGBT non-destructive tester. The tester is designed to test IGBTs at voltage and current ratings less than 3.3kV 2.4kA. Due to stray elements, the circuit might oscillate during the different modes of operation and test conditions. These oscillations could cause high stresses to the IGBT switches in the circuit and cause one or more of the switches to fail. A transient analysis is performed taking into account the different operating conditions. Hence the potential for destructive oscillations can be minimized via the proper design of the IGBT gate resistors. Simulation results of a failure case study using spice simulation software are then presented. In the last part, the design was verified by experimental test.

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Conducted Electromagnetic Interference (EMI) in Smart Grids

Smoleński¹

2012

Power Systems

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The use of general descriptive names, registered names, trademarks, service marks, etc. in this publication does not imply, even in the absence of a specific statement, that such names are exempt from the relevant protective laws and regulations and therefore free for general use. While the advice and information in this book are believed to be true and accurate at the date of publication, neither the authors nor the editors nor the publisher can accept any legal responsibility for any errors or omissions that may be made. The publisher makes no warranty, express or implied, with respect to the material contained herein.

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EMI Characterisation of high power IGBT modules for Traction Application

Cited by 24 publications

References 6 publications

High Frequency Behavior of High Power IGBT Modules

High Frequency Behavior of High Power IGBT Modules

Design and test of a high power IGBT non-destructive tester

Conducted Electromagnetic Interference (EMI) in Smart Grids

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