Emission and optical properties of SiO2/Si thin films

Tashmukhamedova, D. A.; Yusupjanova, M. B.

doi:10.1134/s1027451016050438

Cited by 13 publications

(5 citation statements)

References 3 publications

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“…For surface ionization we use I p surf = 9 eV, similar to earlier studies 23,24 and as reported in the literature. 47 The timedependent near-field is constructed from the Mie solution via spectral decomposition, including dispersion and a quasiinstantaneous contribution from generated free charges (conduction electrons and residual ions). Classical electron trajectories are integrated, including a Monte-Carlo sampling of elastic scattering and impact ionization events inside the nanosphere according to the respective scattering cross sections.…”

Section: ■ Discussionmentioning

confidence: 99%

“…In brief, photoelectrons are generated by evaluating tunnelling rates for the local instantaneous near-field and employing an effective molecular ionization potential. For surface ionization we use = 9 eV, similar to earlier studies , and as reported in the literature . The time-dependent near-field is constructed from the Mie solution via spectral decomposition, including dispersion and a quasi-instantaneous contribution from generated free charges (conduction electrons and residual ions).…”

Section: Discussionmentioning

confidence: 99%

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Ionization-Induced Subcycle Metallization of Nanoparticles in Few-Cycle Pulses

et al. 2020

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Strong-field laser-matter interactions in nanoscale targets offer unique avenues for the generation and detailed characterization of matter under extreme conditions. Field-driven, subcycle ionization-induced metallization of nanoscale solids in intense laser fields has been predicted (Peltz et al. Time-Resolved X-ray Imaging of Anisotropic Nanoplasma Expansion. Phys. Rev. Lett. 2014, 113, 133401), but its observation was hampered by a lack of a smoking gun. Here, we report the ultrafast metallization of isolated dielectric and semiconducting nanoparticles under intense few-cycle laser pulses. The highest-energy electron emission is found to be a decisive proof that shows a characteristic cutoff modification to a metallic limit for intensities high enough to ignite carrier avalanching in the volume of the particles. Semiclassical Mean-field Mie Monte-Carlo transport simulations reveal the underlying dynamics and explain the observed evolution by near-field driven electron backscattering from the metallizing target.

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Section: ■ Discussionmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

Ionization-Induced Subcycle Metallization of Nanoparticles in Few-Cycle Pulses

et al. 2020

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“…For example, χ of MgO has been found to be 0.85 to 1.0 eV [ 22 ] while χ of SiO 2 was estimated to be 0.3 to 0.5 eV. [ 23 ] However, the E

_{\text{g}}

of both MgO and SiO 2 are significantly large, around E

_{\text{g}}

of 6.3 and 8.6 to 8.8 eV, respectively. The significant difference between the E

_{\text{g}}

of the alloying materials and the ZnO E

_{\text{g}}

of 3.25 eV increases the difficulty in controlling the properties of the new alloy material.…”

Section: Introductionmentioning

confidence: 99%

Growth of Zn‐Ge‐O Thin‐Film as a Transparent Conductive Oxide Buffer Material for Chalcopyrite Solar Cell

Egyna

Ito

Nishimura

et al. 2022

Cryst. Res. Technol.

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The importance of positive band offset at the p–n interface of heterojunction thin‐film solar cells has been underlined in the authors' previous work on theoretical study of the role of n‐type layer in determining open‐circuit voltage – and experimental work by other research groups. An n‐type material with low electron affinity has the potential to fulfill the requirements for producing a high‐performance heterojunction thin‐film solar cell. In this current work, a new alternative transparent conductive oxide material for chalcopyrite heterojunction solar cells is investigated by alloying ZnO and GeO2 to grow a Zn‐Ge‐O thin‐film with low electron affinity. The film is grown by metal organic chemical vapor deposition with tetramethoxygermanium as the Ge source. Through film characterization, it is confirmed that higher concentrations of Ge in the film result in lower electron affinities and relatively constant valence band maximums. Different [Ge] / ([Zn] + [Ge]) also affects the film morphology, from polycrystalline at a lower concentration of Ge to aggregation of nanocrystals at a higher concentration of Ge. Electronic characterization and preliminary device application test show promising results for the future of the Zn‐Ge‐O thin‐film as an alternative n‐type layer for chalcopyrite solar cells.

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“…This is attributed to the energy band structure of the photocathode, as shown in Figure 4c,d. The band diagrams were drawn based on the previously reported flat band diagrams [44,[48][49][50] (Figure S7). SiO 2 is an insulating material, and thus has a high band gap.…”

Section: Resultsmentioning

confidence: 99%

Photoelectrochemical Reduction of CO2 to Syngas by Reduced Ag Catalysts on Si Photocathodes

Kim

Choi

et al. 2020

Applied Sciences

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The photoelectrochemical reduction of CO2 to syngas that is used for many practical applications has been emerging as a promising technique to relieve the increase of CO2 in the atmosphere. Si has been considered to be one of the most promising materials for photoelectrodes, but the integration of electrocatalysts is essential for the photoelectrochemical reduction of CO2 using Si. We report an enhancement of catalytic activity for CO2 reduction reaction by Ag catalysts of tuned morphology, active sites, and electronic structure through reducing anodic treatment. Our proposed photocathode structure, a SiO2 patterned p-Si photocathode with these reduced Ag catalysts, that was fabricated using electron-beam deposition and electrodeposition methods, provides a low onset-potential of −0.16 V vs. the reversible hydrogen electrode (RHE), a large saturated photocurrent density of −9 mA/cm2 at −1.23 V vs. RHE, and faradaic efficiency for CO of 47% at −0.6 V vs. RHE. This photocathode can produce syngas in the ratio from 1:1 to 1:3, which is an appropriate proportion for practical application. This work presents a new approach for designing photocathodes with a balanced catalytic activity and light absorption to improve the photoelectrochemical application for not only CO2 reduction reaction, but also water splitting or N2 reduction reaction.

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Emission and optical properties of SiO2/Si thin films

Cited by 13 publications

References 3 publications

Ionization-Induced Subcycle Metallization of Nanoparticles in Few-Cycle Pulses

Ionization-Induced Subcycle Metallization of Nanoparticles in Few-Cycle Pulses

Growth of Zn‐Ge‐O Thin‐Film as a Transparent Conductive Oxide Buffer Material for Chalcopyrite Solar Cell

Photoelectrochemical Reduction of CO2 to Syngas by Reduced Ag Catalysts on Si Photocathodes

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