Emission characteristics variation of GaAs0.92Sb0.08/Al0.3Ga0.7As strained multiple quantum wells caused by rapid thermal annealing

Abstract

Rapid thermal annealing is an effective way to improve the optical properties of semiconductor materials and devices. In this paper, the emission characteristics of GaAs0.92Sb0.08/Al0.3Ga0.7As multiple quantum wells, which investigated by temperature-dependent photoluminescence, are adjusted through strain and interfacial diffusion via rapid thermal annealing. The light-hole (LH) exciton emission and the heavy-hole (HH) exciton emission are observed at room temperature. After annealing, the LH and HH emission peaks have blue shift. It can be ascribed to the variation of interfacial strain at low annealing temperature and the interfacial diffusion between barrier layer and well layer at high annealing temperature. This work is of great significance for emission adjustment of strained multiple quantum wells.

Impact of strain engineering and Sn content on GeSn heterostructured nanomaterials for nanoelectronics and photonic devices

“…A rapid cyclic annealing at 600–800 °C was done five times to decrease lattice constant mismatch under the MQWs structure. 100,101 The EL spectra of the Ge 0.91 Sn 0.09 /Ge MQW p–i–n LED is shown in Fig. 26d.…”