Emission from a Semi-Insulating Layer in AlGaAs-GaAs Double Heterostructures

Beister, G.; Krispin, P.; Maege, J.; Bachert, H.; Stoeff,

doi:10.1002/pssa.2210910160

phys. stat. sol. (a)

1985

DOI: 10.1002/pssa.2210910160

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Emission from a Semi-Insulating Layer in AlGaAs-GaAs Double Heterostructures

G. Beister¹,

P. Krispin²,

J. Maege³

et al.

Abstract: Dedicated to Prof. D r . D r . Ing. h.c. R. ROMPE on the occasion of his 80th birthday

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1986

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Cited by 3 publications

References 5 publications

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The Ge-Related DX Level in Sn/Ge-Doped AlxGa1−xAs Heterojunctions Grown by LPE

Krispin¹,

Maege²

1986

phys. stat. sol. (a)

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The deep‐level spectroscopy is applied to LPE‐grown heterostructures of the AlxGa1−xAs system. It is found that a specific DX level which has been attributed to the incorporation of Sn up to now comes from the Ge doping. The Ge‐related DX level is used to record the Ge donor distribution within the Sn‐doped Al0.35Ga0.65As layer of Sn/Ge/Ge‐doped double‐heterostructures. It is suggested that the high‐ohmic layer often present in Ge containing junctions is due to the site conversion of Ge atoms and diffusion in the electric field of the junction. A novel method is introduced for very sensitive probing the actual position of the pn junction relative to the heterointerface in heterojunctions using the specific properties of the Ge‐related deep level in AlxGa1−xAs.

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The Ge-Related DX Level in Sn/Ge-Doped AlxGa1−xAs Heterojunctions Grown by LPE

Krispin¹,

Maege²

1986

phys. stat. sol. (a)

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show abstract

The isotype Al0.05Ga0.95As/Al0.35Ga0.65As interface of the LPE-grown double heterostructure at elevated temperature

Krispin¹,

Beister²,

Maege³

1988

Solid-State Electronics

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Capacitance-voltage dependence for isotype AlGaAs/GaAs heterointerfaces comprisong rechargeable traps

Beister¹,

Maege²,

Bach³

1990

Solid-State Electronics

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Emission from a Semi-Insulating Layer in AlGaAs-GaAs Double Heterostructures

Abstract: Dedicated to Prof. D r . D r . Ing. h.c. R. ROMPE on the occasion of his 80th birthday

Cited by 3 publications

References 5 publications

The Ge-Related DX Level in Sn/Ge-Doped AlxGa1−xAs Heterojunctions Grown by LPE

The Ge-Related DX Level in Sn/Ge-Doped AlxGa1−xAs Heterojunctions Grown by LPE

The isotype Al0.05Ga0.95As/Al0.35Ga0.65As interface of the LPE-grown double heterostructure at elevated temperature

Capacitance-voltage dependence for isotype AlGaAs/GaAs heterointerfaces comprisong rechargeable traps

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