Emission of free and bound excitons in GaSe and InSe crystals in direct and indirect transition region

Gnatenko, Yu. P.; Skubenko, P. A.; Zhirko, Yu. I.; Fialkovskaya, O. V.

doi:10.1016/0022-2313(84)90331-4

Cited by 6 publications

(2 citation statements)

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“…The slit spectral width of monochromator did not exceed 0.2 meV at T = 5 K and 0.5 meV at T = 300 K. As it can be seen in Fig. 7d, at Т = 5 K the PL spectrum of GaSe crystal consists of lines corresponding to radiation of the free excitons ( = 587.8 nm, E exc = 2.108 eV) [12] as well as of excitons bound to stacking faults of crystalline layers, dislocation, and point defects. Besides, the PL spectrum in the range E < 2.050 eV (> 605.0 nm) contains several bands of a low intensity which, according to [4], are caused by transitions between the direct and indirect conduction bands and shallow acceptors in GaSe<RbNO 3 >.…”

Section: Photoluminescence Spectramentioning

confidence: 83%

Characterization of Layered GaSe Crystals Intercalated with RbNO3 Ferroelectric Salt and their Application for Electric Capacitors

Zhirko¹,

Grekhov²,

Kovalyuk³

et al. 2017

Engineering Journal

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Section: Photoluminescence Spectramentioning

confidence: 83%

Characterization of Layered GaSe Crystals Intercalated with RbNO3 Ferroelectric Salt and their Application for Electric Capacitors

Zhirko¹,

Grekhov²,

Kovalyuk³

et al. 2017

Engineering Journal

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“…Their mirrorlike surfaces are practically ideal with a normal parallel to the crystallographic C axis. A variety of electron transitions determines a complicated structure of PL spectra due to the presence of energy levels of various nature in the InSe energy gap [1][2][3][4][5][6][7][8]. So, ІnSe is an indirect semiconductor [9].…”

Section: Introductionmentioning

confidence: 99%

Photoemission spectra of indium selenide

Katerynchuk¹

2006

Semicond. phys. quantum electron. optoelectron.

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For layered InSe crystals photoluminescence spectra were investigated and the corresponding radiative transitions were analyzed. It was found that along with the bandto-band transitions the radiative ones with participation of impurity levels plays a substantial role in the light emission spectrum of the semiconductor. This fact is confirmed by the intensities of the radiative bands for the impurity level-c(v)-band transitions and the donor-acceptor recombination. The temperature dependences of the spectrum in the range of 100 to 300 К have also enabled to ascertain the dynamics of these radiative transitions. At the temperatures 180 to 300 К, the bands associated with the indirect transitions involving indirect free excitons are more intensive. At 100…180 К, the intensity of the bands corresponding to the direct transitions with participation of direct free excitons increases. We have determined the energies of the observed photoluminescence bands, and the band diagram of the corresponding radiative transitions in InSe has been built.

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Exciton Absorption and Luminescence of Indium Selenide Crystals

Gnatenko

Zhirko

1987

Physica Status Solidi (b)

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By investigations of low-temperature photoluminescence (PL) spectra of InSe crystals the nature of emission lines in the region of indirect exciton transitions is determined and the energy diagram of optical direct and indirect transitions is offered. The presence in y-InSe of regions containing stacking faults results in the appearance of a fine structure in the P L spectra of an n = 1 exciton state. Within the framework of a "resonant exciton" model the causes of the growth of integrated intensity in the absorption spectra of an n = 1 exciton state are discussed.

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Emission of free and bound excitons in GaSe and InSe crystals in direct and indirect transition region

Cited by 6 publications

References 1 publication

Characterization of Layered GaSe Crystals Intercalated with RbNO3 Ferroelectric Salt and their Application for Electric Capacitors

Characterization of Layered GaSe Crystals Intercalated with RbNO3 Ferroelectric Salt and their Application for Electric Capacitors

Photoemission spectra of indium selenide

Exciton Absorption and Luminescence of Indium Selenide Crystals

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