Emission properties of sequentially deposited ultrathin CH3NH3PbI3/MoS2 heterostructures

Growth behaviors and emission properties of Co-deposited MAPbI3 ultrathin films on MoS2

“…2(e), which is in agreement with the previous reports. [17,21,37,38] Taking the transport gaps of MAPbI 3 and monolayer MoS 2 as 1.65 eV and 2.11 eV, [39] respectively, both conduction band minimum (CBM) and valence band maximum (VBM) levels of MAPbI 3 are higher than those of MoS 2 . [40,41] For sample III, the CPD difference is ∼ 20 mV [see Fig.…”

“…Its photon energy exhibits a linear redshift from room temperature to 260 K, then a non-linear 017901-4 blue-shift from 26 K to 120 K. It is obviously different from that of sample III and previous results. [9,12,21] Below 120 K, a new peak appears at 1.72 eV (peak V, blue plot), which belongs to the orthorhombic phase MAPbI 3 . More details about the peak fitting are shown in Fig.…”

“…In the best fitting, the parameters are Γ 0 = 30.0 ± 2.3 meV, Γ op = 144.7 ± 7.5 meV, and hω op = 25.1 ± 5.0 meV, in agreement with the previous report. [21] Molecularly thin film of MAPbI 3 prepared by codeposition on monolayer MoS 2 has better crystalline and novel exciton behavior, which could be beneficial for getting atomically clean interfaces and investigating related properties.…”

“…[16][17][18][19] In previous reports, thicknesscontrollable MAPbI 3 ultrathin layers are successfully fabricated on chemical vapor deposition (CVD)-grown or mechanical exfoliation monolayer TMDCs using a two-step sequential deposition method. [20,21] However, such a method has some shortcomings, such as the volume expansion and structure damage in MAI intercalation process. The Co-deposition method is superior for preparing MAPbI 3 thin films with a wide range of clean interfaces, homogeneous morphology, and better stability.…”

First-principles calculations for heterostructure studies Involving CsPbI3 perovskite and IV-VI semiconductors

“…In recent years, all-inorganic cesium lead iodide(CsPbI 3 ) perovskites have found widespread applications in optoelectronic devices such as solar cells and photodetectors due to their outstanding performance [27][28][29]. Scholars have demonstrated that heterostructures based on epitaxial CsPbI 3 and other semiconductors (e.g., CsPbI 3 /PtSe 2 , CsPbI 3 /WTe 2 , and CsPbI 3 /FAPbI 3 ) open up new possibilities for band structural engineering and novel devices [30][31][32]. For devices such as Light-Emitting Diodes (LEDs) and solar cells, a type-I heterostructure is preferred, while for heterostructures used in photocatalysis and photovoltaic devices, a type-II band alignment is the preferred choice [33].…”