1989
DOI: 10.1063/1.455935
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Emission spectra of SiF3

Abstract: Emission spectra of SiF3 radical were observed from photodissociative excitation of SiF4 at 99.1, 95.5, and 92.3 nm. The spectra show a broad visible band in the 350–800 nm region, a UV band in 290–340 nm, and a weak band in 240–280 nm. The visible band resembles the chemiluminescence spectra observed from etching of silicon by F or XeF2.

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Cited by 8 publications
(21 citation statements)
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“…This Letter reports such calculations. We show that excited states of this radical do lie at energies consistent with the observations of Suto et al [5] and Biehl et al [8]. However, we calculate that the radiative lifetime of the upper state of an allowed electronic transition in any region of the visible spectrum, 400-800 nm, cannot be as low as 3.9 ns.…”
Section: Introductionsupporting
confidence: 77%
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“…This Letter reports such calculations. We show that excited states of this radical do lie at energies consistent with the observations of Suto et al [5] and Biehl et al [8]. However, we calculate that the radiative lifetime of the upper state of an allowed electronic transition in any region of the visible spectrum, 400-800 nm, cannot be as low as 3.9 ns.…”
Section: Introductionsupporting
confidence: 77%
“…5.3 to 0.9 eV or 230-1360 nm (Table 1) ; the lowerenergy threshold is determined by the smallest gap between the à and X states which pertains at planarity ( Figure 1). The experiments of Suto et al [5] and Biehl et al [8] cannot detect the predicted high-wavelength region due to the insensitivity of photomultiplier tubes above ca. 800 nm.…”
Section: Resultsmentioning
confidence: 99%
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