Emission yield for quantitative depth profile analysis by glow discharge optical emission—the influence of discharge parameters

Bengtson, Arne; Hänström, Sofia

doi:10.1039/a708466h

Cited by 25 publications

(18 citation statements)

References 8 publications

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“…A comparison of sputtered crater shapes and depth profiles by Hoffmann and co-workers showed no appreciable differences between the two powering modes [39]. Finally, studies by Payling and co-workers [31] and Bengtson and Hänström [40] have shown that the quantification capabilities in the rf mode are comparable to those in the DC mode.…”

Section: Introductionmentioning

confidence: 88%

“…They are presented simply as examples of the scope of applicability in terms of qualitative depth-resolved information. In fact, quantitative analyses on such systems would be a reasonably straightforward process [31,40]. It is believed, though a technique still in its relative infancy, that rf-GD-OES could indeed be a vital component in the arsenal of depth profiling techniques.…”

Section: Introductionmentioning

confidence: 99%

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Radio frequency glow discharge optical emission spectroscopy: a new weapon in the depth profiling arsenal

et al. 2002

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While the array of analytical methods routinely applied for depth profile analysis was fairly static over the decades of the 1980s and 1990s, there appears to be an emerging technique that has a number of very positive and complementary attributes, and warrants serious consideration by the thin film community. Radio frequency glow discharge optical emission spectroscopy (rf-GD-OES) is a technique that provides depth-resolved elemental composition information on a wide variety of sample types. In a manner very much like most depth profiling methods, the rf-GD plasma utilizes an ion sputtering step to ablate sample material in a layer-by-layer fashion. Different from the more commonly applied methods, the device operates at elevated pressures [2-10 Torr Ar (266-1,330 Pa)] and has the inherent capability of sputtering electrically insulating materials directly, without any auxiliary means of charge compensation. In addition, sputtering rates on the order of 1 micro m/min provide rapid analysis, with depth resolving powers that are comparable to high-vacuum sputtering methods. Three examples of the use of the rf-GD-OES method are presented as examples of its analytical potential: (1) boron-implanted silicon wafer, (2) a barrier-type alumina film, and (3) a porous-type alumina film. It is believed that the method holds a great deal of promise as part of the arsenal of weapons in the thin films laboratory.

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Section: Introductionmentioning

confidence: 88%

Section: Introductionmentioning

confidence: 99%

Radio frequency glow discharge optical emission spectroscopy: a new weapon in the depth profiling arsenal

et al. 2002

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“…Bengtson et al showed for DC-GD-OES that the corrected intensities are independent on the penetrated material [5,124,125]. The evaluated parameters U m and I m should also be usable to correct the intensities for different materials.…”

Section: Dependence Of Intensities On Voltage and Currentmentioning

confidence: 97%

“…In the following calculations we use a fixed value of U 0 = 300 V, which is also proposed by Bengtson [5,125]. For the following evaluations we chose measurements within the range 700 V b U m b 1100 V, 15 mA b I m b 40 mA, which is sufficient to cover the current changes that will occur for measurements at constant pressure.…”

Section: Transformation Of the Sputtering Rates And Intensities To A mentioning

confidence: 99%

Electrical measurements at radio frequency glow discharges for spectroscopy

Wilken

Hoffmann

Wetzig

2007

Spectrochimica Acta Part B: Atomic Spectroscopy

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“…However, it is known that Y sometimes depends on the plasma operating conditions (in one study it was concluded [42,43] that although the pressure, voltage, and current have some impact on Y, the emission yield is about four times more sensitive to changes in voltage or current than it is to changes in pressure).…”

Section: Radiofrequency Glow Discharge-optical Emission Spectrometrymentioning

confidence: 95%

Radiofrequency glow-discharge devices for direct solid analysis

Pisonero

Costa

Pereiro

et al. 2004

Analytical and Bioanalytical Chemistry

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The enormous potential of radiofrequency glow discharges (rf-GD) as photon, atom, or ion sources, coupled to spectrometric techniques, for rapid direct analysis of almost any conductor, semiconductor, or insulating material with good in-depth resolution has been demonstrated world-wide. This outstanding performance has prompted a great effort to develop and characterise rf-GD for direct materials analysis in recent years. The state of the art of rf-GD coupled to atomic absorption spectrometry, optical emission spectrometry, and mass spectrometry for direct solid analysis is reviewed here. A description of the principles of operation of the rf-GD and attempts to model these discharges are also given. Rf-GD instrumentation, both developed at research laboratories and commercially available, is described. Several practical examples are given demonstrating the capabilities of these techniques for bulk and depth-profile analysis. Finally, the research gaps to be filled for full implementation of rf-GD spectrometric techniques in industry and research centres alike for materials science studies and technical development are discussed.

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Emission yield for quantitative depth profile analysis by glow discharge optical emission—the influence of discharge parameters

Cited by 25 publications

References 8 publications

Radio frequency glow discharge optical emission spectroscopy: a new weapon in the depth profiling arsenal

Radio frequency glow discharge optical emission spectroscopy: a new weapon in the depth profiling arsenal

Electrical measurements at radio frequency glow discharges for spectroscopy

Radiofrequency glow-discharge devices for direct solid analysis

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