Empirical inference of in situ wafer sagging in Si epitaxy using pocket susceptor

Microscopic contact and slip in Si epitaxy

“…The test wafer comprises a 27-min hydrogen bake at 1150 1C and a 13-min deposition at 1135 1C. The transfer pattern is due to the reactive transfer of the susceptor coating to the contacting wafer surface [9,10]. The ring pattern is uniquely related to the growth schedule.…”

Pocket surface and slip defect in Si epitaxy

“…4a, the slip extent is high in the area where sagging is impeded [3]. Here, the contact extension rate is inferred from the backside transfer pattern [10][11][12]. Each tree-ring denotes a period of 1 min deposition and 5 min purge.…”