Employing constant photocurrent method for the study of defects in silicon thin films

Malik, Hitendra K.; Juneja, Sandeep; Kumar, Sushil

doi:10.1007/s40094-019-0325-4

Cited by 3 publications

(2 citation statements)

References 21 publications

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“…This is achieved by adjusting the power at each E ph to a value which will give the smallest readable PC signal. This procedure is similar to that described by the constant photocurrent method (CPM) (11), although we do not require the generated PC signal to remain constant.…”

Section: Power Normalizationmentioning

confidence: 99%

(Invited) Ultrabroadband Photoconduction Response of Sub-gap Defects in Amorphous In-Ga-Zn-O Thin Film Transistors

et al. 2020

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Amorphous oxide thin-film transistors (TFTs) have provided a new route to transparent, low power consumption, large-area display technology. The properties of these thin films are crucially dependent on material composition and process variations which give rise to sub-gap defect states that may act as dopants and can be used to tune the electronic properties of devices. Because these devices are sensitive to small changes in processing, there is a need for a high-throughput, reliable method for extracting sub-gap defect concentrations of amorphous oxides. We present a method, ultrabroadband photoconduction microscopy (UBPC), to extract the density of states of defects throughout the sub-gap of amorphous In-Ga-Zn-O (a-IGZO) TFTs from 0.3 - 3.5 eV. By utilizing continuously tunable, focused laser excitation, we maintain high signal-to-noise over ~5 orders of magnitude of photoconduction, while removing transfer curve drift effects by subtracting dark current in real time via lock-in amplification.

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Section: Power Normalizationmentioning

confidence: 99%

(Invited) Ultrabroadband Photoconduction Response of Sub-gap Defects in Amorphous In-Ga-Zn-O Thin Film Transistors

et al. 2020

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“…Therefore, in this paper we perform nanoindentation tests with different strain rates and depths on two samples: as-deposited and annealed, in order to study dynamic properties and size effects in probably the most popular a-Si films prepared by PECVD. [24,25] II. EXPERIMENTAL…”

Section: Introductionmentioning

confidence: 99%

Size Effects of Hardness and Strain Rate Sensitivity in Amorphous Silicon Measured by Nanoindentation

Jarząbek

Milczarek

Nosewicz

et al. 2020

Metall Mater Trans A

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In this work, dynamic mechanical properties of amorphous silicon and scale effects were investigated by the means of nanoindentation. An amorphous silicon sample was prepared by plasma-enhanced chemical vapor deposition (PECVD). Next, two sets of the samples were investigated: as-deposited and annealed in 500°C for 1 hour. A three-sided pyramidal diamond Berkovich's indenter was used for the nanoindentation tests. In order to determine the strain rate sensitivity (SRS), indentations with different loading rates were performed: 0.1, 1, 10, 100 mN/min. Size effects were studied by application of maximum indentation loads in the range from 1 up to 5 mN (penetrating up to approximately one-third of the amorphous layer). The value of hardness was determined by the Oliver-Pharr method. An increase of hardness with decrease of the indentation depth was observed for both samples. Furthermore, the significant dependence of hardness on the strain rate has been reported. Finally, for the annealed samples at low strain rates a characteristic ''elbow'' during unloading was observed on the force-indentation depth curves. It could be attributed to the transformation of (b-Sn)-Si to the PI (pressure-induced) a-Si end phase.

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Wide optical gap B-doped nc-Si thin films with advanced crystallinity and conductivity on transparent flexible substrates for potential low-cost flexible electronics including nc-Si superstrate p–i–n solar cells

Das

Patra

2021

Mater. Adv.

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Employing constant photocurrent method for the study of defects in silicon thin films

Cited by 3 publications

References 21 publications

(Invited) Ultrabroadband Photoconduction Response of Sub-gap Defects in Amorphous In-Ga-Zn-O Thin Film Transistors

(Invited) Ultrabroadband Photoconduction Response of Sub-gap Defects in Amorphous In-Ga-Zn-O Thin Film Transistors

Size Effects of Hardness and Strain Rate Sensitivity in Amorphous Silicon Measured by Nanoindentation

Wide optical gap B-doped nc-Si thin films with advanced crystallinity and conductivity on transparent flexible substrates for potential low-cost flexible electronics including nc-Si superstrate p–i–n solar cells

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