Abstract:Time Dependent Dielectric Breakdown (TDDB) is one of the major indices to evaluate the Gate Oxide Integrity (GOI) reliability of Integrated Circuit (IC) devices. Permutation and combination theory helps to derive the many combinations of temperature and voltage stress levels to determine TDDB parameters (i.e., and Ea) with a pre-specified sample size. In this work, a statistical tool (JMP10) with optimal experimental design platform for accelerated life test (ALT) is employed to select stressing conditions, to… Show more
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.