Enabling 2D Electron Gas with High Room‐Temperature Electron Mobility Exceeding 100 cm² Vs⁻¹ at a Perovskite Oxide Interface

Abstract

In perovskite oxide heterostructures, bulk functional properties coexist with emergent physical phenomena at epitaxial interfaces. Notably, charge transfer at the interface between two insulating oxide layers can lead to the formation of a 2D electron gas (2DEG) with possible applications in, e.g., high‐electron‐mobility transistors and ferroelectric field‐effect transistors. So far, the realization of oxide 2DEGs is, however, largely limited to the interface between the single‐crystal substrate and epitaxial film, preventing their deliberate placement inside a larger device architecture. Additionally, the substrate‐limited quality of perovskite oxide interfaces hampers room‐temperature (RT) 2DEG performance due to notoriously low electron mobility. In this work, the controlled creation of an interfacial 2DEG at the epitaxial interface between perovskite oxides BaSnO3 and LaInO3 is demonstrated with enhanced RT electron mobility values up to 119 cm2 Vs−1—the highest RT value reported so far for a perovskite oxide 2DEG. Using a combination of state‐of‐the‐art deposition modes during oxide molecular beam epitaxy, this approach opens up another degree of freedom in optimization and in situ control of the interface between two epitaxial oxide layers away from the substrate interface. Thus this approach is expected to apply to the general class of perovskite oxide 2DEG systems and to enable their improved compatibility with novel device concepts and integration across materials platforms.