Enabling <i>In Situ</i> Studies of Metal-Organic Chemical Vapor Deposition in a Transmission Electron Microscope

Tornberg, Marcus; Maliakkal, Carina B.; Jacobsson, Daniel; Wallenberg, L. Reine; Dick, Kimberly A.

doi:10.1017/s1431927622000769

Cited by 18 publications

(17 citation statements)

References 31 publications

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“…The investigated nanowires were grown at growth conditions facilitating wurtzite crystal phase as seen in video S2. More detailed description about the experimental system can be found in refs 25,26 . To analyze the step-flow and incubation processes in the GaAs nanowires videos of nanowire growth were obtained using a Gatan OneView IS camera.…”

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confidence: 99%

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In situ observations of size effects in GaAs nanowire growth

et al. 2023

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confidence: 99%

“…More detailed description about the experimental system can be found in ref. 25 and 26. To analyze the step-flow and incubation processes in the GaAs nanowires videos of nanowire growth were obtained using a Gatan OneView IS camera.…”

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confidence: 99%

In situ observations of size effects in GaAs nanowire growth

et al. 2023

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“…The background pressure next to the sample was ∼9.20 × 10 –4 Pa. Detailed information about the used environmental TEM and its capabilities are available elsewhere …”

Section: Methodsmentioning

confidence: 99%

“…The process parameters used for the GaP nucleation and growth by Ag-Cu 3 P seed particles are summarized in Tables S4 and S5. The total and partial pressures were estimated based on a recently published study . The graph in Figure S4 reveals the variation of process conditions over time and specific experiment events.…”

Section: Methodsmentioning

confidence: 99%

Insights into the Synthesis Mechanisms of Ag-Cu₃P-GaP Multicomponent Nanoparticles

Seifner

Snellman

et al. 2023

ACS Nano

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Metal−semiconductor nanoparticle heterostructures are exciting materials for photocatalytic applications. Phase and facet engineering are critical for designing highly efficient catalysts. Therefore, understanding processes occurring during the nanostructure synthesis is crucial to gain control over properties such as the surface and interface facets' orientations, morphology, and crystal structure. However, the characterization of nanostructures after the synthesis makes clarifying their formation mechanisms nontrivial and sometimes even impossible. In this study, we used an environmental transmission electron microscope with an integrated metal− organic chemical vapor deposition system to enlighten fundamental dynamic processes during the Ag-Cu 3 P-GaP nanoparticle synthesis using Ag-Cu 3 P seed particles. Our results reveal that the GaP phase nucleated at the Cu 3 P surface, and growth proceeded via a topotactic reaction involving counter-diffusion of Cu + and Ga 3+ cations. After the initial GaP growth steps, the Ag and Cu 3 P phases formed specific interfaces with the GaP growth front. GaP growth proceeded by a similar mechanism observed for the nucleation involving the diffusion of Cu atoms through/along the Ag phase toward other regions, followed by the redeposition of Cu 3 P at a specific Cu 3 P crystal facet, not in contact with the GaP phase. The Ag phase was essential for this process by acting as a medium enabling the efficient transport of Cu atoms away from and, simultaneously, Ga atoms toward the GaP-Cu 3 P interface. This study shows that enlightening fundamental processes is critical for progress in synthesizing phase-and facet-engineered multicomponent nanoparticles with tailored properties for specific applications, including catalysis.

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“…For compositional analysis an Oxford Instruments SDD X-Max N 80T XEDS system was used. Further details about the system are provided elsewhere. , …”

Section: Experimental Sectionmentioning

confidence: 99%

Observation of the Multilayer Growth Mode in Ternary InGaAs Nanowires

et al. 2022

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Au-seeded semiconductor nanowires have classically been considered to only grow in a layer-by-layer growth mode, where individual layers nucleate and grow one at a time with an incubation step in between. Recent in situ investigations have shown that there are circumstances where binary semiconductor nanowires grow in a multilayer fashion, creating a stack of incomplete layers at the interface between a nanoparticle and a nanowire. In the current investigation, the growth behavior in ternary InGaAs nanowires has been analyzed in situ, using environmental transmission electron microscopy. The investigation has revealed that multilayer growth also occurs for ternary nanowires and appears to be more common than in the binary case. In addition, the size of the multilayer stacks observed is much larger than what has been reported previously. The investigation details the implications of multilayers for the overall growth of the nanowires, as well as the surrounding conditions under which it has manifested. We show that multilayer growth is highly dynamic, where the stack of layers regularly changes size by transporting material between the growing layers. Another observation is that multilayer growth can be initiated in conjunction with the formation of crystallographic defects and compositional changes. In addition, the role that multilayers can have in behaviors such as growth failure and kinking, sometimes observed when creating heterostructures between GaAs and InAs ex situ, is discussed. The prevalence of multilayer growth in this ternary material system implies that, in order to fully understand and accurately predict the growth of nanowires of complex composition and structure, multilayer growth has to be considered.

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Enabling In Situ Studies of Metal-Organic Chemical Vapor Deposition in a Transmission Electron Microscope

Cited by 18 publications

References 31 publications

In situ observations of size effects in GaAs nanowire growth

In situ observations of size effects in GaAs nanowire growth

Insights into the Synthesis Mechanisms of Ag-Cu₃P-GaP Multicomponent Nanoparticles

Observation of the Multilayer Growth Mode in Ternary InGaAs Nanowires

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Enabling In Situ Studies of Metal-Organic Chemical Vapor Deposition in a Transmission Electron Microscope

Cited by 18 publications

References 31 publications

In situ observations of size effects in GaAs nanowire growth

In situ observations of size effects in GaAs nanowire growth

Insights into the Synthesis Mechanisms of Ag-Cu3P-GaP Multicomponent Nanoparticles

Observation of the Multilayer Growth Mode in Ternary InGaAs Nanowires

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Insights into the Synthesis Mechanisms of Ag-Cu₃P-GaP Multicomponent Nanoparticles