Proceedings of the 53rd Annual Design Automation Conference 2016
DOI: 10.1145/2897937.2898018
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Enabling sub-blocks erase management to boost the performance of 3D NAND flash memory

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Cited by 21 publications
(11 citation statements)
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“…Considering the block size becomes larger in recent 3D NAND flash chips, the page move overhead in the GC process keeps increasing [36]. To improve the system performance by reducing GC overheads and boost the device reliability/lifetime, some studies are proposed to make flash chips supporting "sub-block erase" to cut the page move overhead.…”
Section: Case Study On Sub-block Erase Over 3d-nandmentioning
confidence: 99%
See 1 more Smart Citation
“…Considering the block size becomes larger in recent 3D NAND flash chips, the page move overhead in the GC process keeps increasing [36]. To improve the system performance by reducing GC overheads and boost the device reliability/lifetime, some studies are proposed to make flash chips supporting "sub-block erase" to cut the page move overhead.…”
Section: Case Study On Sub-block Erase Over 3d-nandmentioning
confidence: 99%
“…To improve the system performance by reducing GC overheads and boost the device reliability/lifetime, some studies are proposed to make flash chips supporting "sub-block erase" to cut the page move overhead. In general, the functionality of sub-block erase is enabled by redundant hardware or software emulated free space as the isolation layer [36][37][38]. This section carries out a case study to check the effectiveness of our proposal in the sub-block erase supported 3D-NAND flash memory.…”
Section: Case Study On Sub-block Erase Over 3d-nandmentioning
confidence: 99%
“…Wu et al 1 propose a distanceaware round robin page allocation scheme for improving the utilization of internal parallelism and thus improving the read performance. There are also works proposed to mitigate the detrimental effects of garbage collection activities, [5][6][7]11 or mitigate the retention error and degraded system performance incurred by the process variation. 3,9,12,13 However, few of these works target on the degraded QoS performance incurred by the OSP in 3D CT-based SSDs.…”
Section: Related Workmentioning
confidence: 99%
“…Some works propose to improve the system I/O performance by enhanced internal parallelism, 1,4 which does not consider the QoS performance. There are also works proposed to improve the QoS performance by revised garbage collection, [5][6][7] or mitigate the impaired storage lifetime incurred by process variation. [8][9][10] Since these works do not take account of the unique feature of OSP technique, there still exists a demanding need to enhance the efficacy when leveraging the OSP operations on 3D SSDs.…”
mentioning
confidence: 99%
“…In Table 3, ''a'' denotes the degree of cell degradation caused by the erase operation and ''b'' denotes the degree of cell degradation caused by the program operation. In general, ''a'' is 1000 times higher than ''b'' [9], [17]. In other words, the degree of degradation caused by the erase operation is more severe than the degree of degradation caused by the program operation.…”
Section: Performance Comparisonmentioning
confidence: 99%