Enabling triferroics coupling in breathing kagome lattice Nb<sub>3</sub>X<sub>8</sub> (X = Cl, Br, I) monolayers

Feng, Yang; Yang, Qing

doi:10.1039/d3tc00560g

Cited by 11 publications

(7 citation statements)

References 51 publications

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“…Besides, ferrovalley polarization can also be switched by the robust ferroelectricity−valley coupling or spin−valley coupling. 408 As described in the previous paragraphs, stacking often induces unexpected new physical phenomena, irrespective of homolayer stacking or more complex heterogeneous stacking. For example, the bilayer YI 2 with 3R-type stackings not only exhibits the valley-magnetism polarization held in monolayer YI 2 but also generates unexpected ferroelectric polarization.…”

Section: D Triferroicsmentioning

confidence: 90%

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Ferroic Phases in Two-Dimensional Materials

Man,

Huang,

Zhao

et al. 2023

Chem. Rev.

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Two-dimensional (2D) ferroics, namely ferroelectric, ferromagnetic, and ferroelastic materials, are attracting rising interest due to their fascinating physical properties and promising functional applications. A variety of 2D ferroic phases, as well as 2D multiferroics and the novel 2D ferrovalleytronics/ferrotoroidics, have been recently predicted by theory, even down to the single atomic layers. Meanwhile, some of them have already been experimentally verified. In addition to the intrinsic 2D ferroics, appropriate stacking, doping, and defects can also artificially regulate the ferroic phases of 2D materials. Correspondingly, ferroic ordering in 2D materials exhibits enormous potential for future high density memory devices, energy conversion devices, and sensing devices, among other applications. In this paper, the recent research progresses on 2D ferroic phases are comprehensively reviewed, with emphasis on chemistry and structural origin of the ferroic properties. In addition, the promising applications of the 2D ferroics for information storage, optoelectronics, and sensing are also briefly discussed. Finally, we envisioned a few possible pathways for the future 2D ferroics research and development. This comprehensive overview on the 2D ferroic phases can provide an atlas for this field and facilitate further exploration of the intriguing new materials and physical phenomena, which will generate tremendous impact on future functional materials and devices.

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Section: D Triferroicsmentioning

confidence: 90%

“…The out-of-plane ferroelectricity polarization as well as the intralayer ferromagnetism is ascribed to the breathing process of Nb-trimer. Besides, ferrovalley polarization can also be switched by the robust ferroelectricity–valley coupling or spin–valley coupling …”

Section: D Multiferroicsmentioning

confidence: 99%

Ferroic Phases in Two-Dimensional Materials

Man,

Huang,

Zhao

et al. 2023

Chem. Rev.

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“…Based on first-principles density-functional theory, Feng et al and Peng et al revealed that monolayer Nb 3 X 8 (X = Cl, Br, I) with a breathing kagome lattice are 2D multiferroic ferrovalley semiconductors [91,92]. The crystal and band structure of Nb 3 I 8 are shown in figure 9(c, d).…”

Section: X 3 M 3 X 8 and Mnxmentioning

confidence: 99%

Valleytronics in two-dimensional magnetic materials

Luo,

Huang,

Qiao

et al. 2024

J. Phys. Mater.

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Valleytronics uses valleys to encode information. It combines other degrees of freedom to produce a more comprehensive, stable, and efficient information processing system. However, in nonmagnetic valleytronic materials, the valley polarization is transient and the depolarization occurs once the external excitation is withdrawn. Introduction of magnetic field is an effective approach to realizing the spontaneous valley polarization by breaking the time-reversal symmetry. In hexagonal magnetic valleytronic materials, the inequivalent valleys at the K and -K Dirac cones have asymmetric energy gaps and Berry curvatures. The time-reversal symmetry in nonmagnetic materials can be broken by applying an external magnetic field, adding a magnetic substrate or doping magnetic atoms. Recent theoretical studies have demonstrated that valleytronic materials with intrinsic ferromagnetism, now termed as ferrovalley materials, exhibit spontaneous valley polarization without the need for external fields to maintain the polarization. The coupling of the valley and spin degrees of freedom enables stable and unequal distribution of electrons in the two valleys and thus facilitating nonvolatile information storage. Hence, ferrovalley materials are promising materials for valleytronic devices. In this review, we first briefly overview valleytronics and its related properties, the ways to realize valley polarization in nonmagnetic valleytronic materials. Then we focus on the recent developments in two-dimensional ferrovalley materials, which can be classified according to their molecular formula and crystal structure: MX2; M(XY)2, M(XY2) and M(XYZ)2; M2X3, M3X8 and MNX6; MNX2Y2, M2X2Y6 and MNX2Y6; and the Janus structure ferrovalley materials. In the inequivalent valleys, the Berry curvatures have opposite signs with unequal absolute values, leading to anomalous valley Hall effect. When the valley polarization is large, the ferrovalleys can be selectively excited even with unpolarized light. Intrinsic valley polarization in two-dimensional ferrovalley materials is of great importance. It opens a new avenue for information-related applications and hence is under rapid development.

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“…32,51 The properties of RuBrCl, RuBrF, and RuClF monolayers could be modulated by considering the biaxial strains. 58,59 In Fig. S3 (ESI †), the bond angles and bond lengths of the RuXY monolayers are increased or decreased at different strains.…”

Section: (B) the Original Symmetrical Structuresmentioning

confidence: 99%

Two dimensional Janus RuXY (X, Y = Br, Cl, F, I, X ≠ Y) monolayers: ferromagnetic semiconductors with spontaneous valley polarization and tunable magnetic anisotropy

Liu,

Zhou,

Wang

et al. 2023

Phys. Chem. Chem. Phys.

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Enabling triferroics coupling in breathing kagome lattice Nb₃X₈ (X = Cl, Br, I) monolayers

Abstract: Two-dimensional (2D) intrinsic multiferroic semiconductors have attracted extensive attention in recent years due to their great prospects for future miniature information storage devices. Herein, based on first-principles calculations, we propose...

Cited by 11 publications

References 51 publications

Ferroic Phases in Two-Dimensional Materials

Ferroic Phases in Two-Dimensional Materials

Valleytronics in two-dimensional magnetic materials

Two dimensional Janus RuXY (X, Y = Br, Cl, F, I, X ≠ Y) monolayers: ferromagnetic semiconductors with spontaneous valley polarization and tunable magnetic anisotropy

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Enabling triferroics coupling in breathing kagome lattice Nb3X8 (X = Cl, Br, I) monolayers

Abstract: Two-dimensional (2D) intrinsic multiferroic semiconductors have attracted extensive attention in recent years due to their great prospects for future miniature information storage devices. Herein, based on first-principles calculations, we propose...

Cited by 11 publications

References 51 publications

Ferroic Phases in Two-Dimensional Materials

Ferroic Phases in Two-Dimensional Materials

Valleytronics in two-dimensional magnetic materials

Two dimensional Janus RuXY (X, Y = Br, Cl, F, I, X ≠ Y) monolayers: ferromagnetic semiconductors with spontaneous valley polarization and tunable magnetic anisotropy

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Product

Resources

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Enabling triferroics coupling in breathing kagome lattice Nb₃X₈ (X = Cl, Br, I) monolayers