2002
DOI: 10.1063/1.1516859
|View full text |Cite
|
Sign up to set email alerts
|

Encapsulation of phosphorus dopants in silicon for the fabrication of a quantum computer

Abstract: The incorporation of phosphorus in silicon is studied by analyzing phosphorus δ-doped layers using a combination of scanning tunneling microscopy, secondary ion mass spectrometry and Hall effect measurements. The samples are prepared by phosphine saturation dosing of a Si(100) surface at room temperature, a critical annealing step to incorporate phosphorus atoms, and subsequent epitaxial silicon overgrowth. We observe minimal dopant segregation (~5 nm), complete electrical activation at a silicon growth temper… Show more

Help me understand this report
View preprint versions

Search citation statements

Order By: Relevance

Paper Sections

Select...
4
1

Citation Types

11
136
1

Year Published

2004
2004
2023
2023

Publication Types

Select...
8
1

Relationship

1
8

Authors

Journals

citations
Cited by 98 publications
(148 citation statements)
references
References 14 publications
11
136
1
Order By: Relevance
“…2(b) shows a high resolution image of two Si-P heterodimers, which appear as zig-zags along the dimer row, with the highest part ∼ 0.3Å above the surface dimers. 13 This zig-zag appearance indicates there is static buckling of the surface dimers on either side of the Si-P heterodimer. Figure 2(b) shows that this buckling decays in amplitude as a function of distance from the Si-P heterodimer and extends 2-3 dimers away from it.…”
Section: B P Identification Using Stm and Aesmentioning
confidence: 99%
See 1 more Smart Citation
“…2(b) shows a high resolution image of two Si-P heterodimers, which appear as zig-zags along the dimer row, with the highest part ∼ 0.3Å above the surface dimers. 13 This zig-zag appearance indicates there is static buckling of the surface dimers on either side of the Si-P heterodimer. Figure 2(b) shows that this buckling decays in amplitude as a function of distance from the Si-P heterodimer and extends 2-3 dimers away from it.…”
Section: B P Identification Using Stm and Aesmentioning
confidence: 99%
“…3,8,12,13 The majority of the investigations mentioned above have studied the interaction of phosphine with the Si(001) surface at high surface coverages. However, at low coverages there are only two papers reporting detailed atomic-resolution scanning tunneling microscopy (STM) investigations of the Si(001):PH 3 system, the first by Wang et al…”
Section: Introductionmentioning
confidence: 99%
“…This has opened the way to the fabrication of atomically patterned dopant devices beyond simple δ-doped layers [4,5] to quantum atomic-scale nanowires [6][7][8], quantum dots [9], and a single-dopant singleelectron transistor [10], all of which are formed from buried dopants within ∼25 nm of the surface. It also holds potential for the realization of theoretical proposals to process quantum information encoded in the impurity spin states using either electrical [11] or optical [12,13] control of the donor wave functions.…”
Section: Introductionmentioning
confidence: 99%
“…26 Several experimental efforts are underway to fully develop qubit and quantum technologies based on phosphorous dopants. [27][28][29] A key to these efforts has been the utilization of scanning tunneling microscopy (STM) to both fabricate and characterize the unique placement of single phosphorous donors on both silicon and germanium surfaces. Most impressive has been the placement of isolated phosphorous dopants within electronic contacts that can be macroscopically addressed.…”
Section: Introductionmentioning
confidence: 99%