End Point Detection in Plasma Etching by Optical Emission Spectroscopy

Hirobe, K.; Tsuchimoto, Takashi

doi:10.1149/1.2129625

Cited by 18 publications

(11 citation statements)

References 2 publications

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“…15. At room temperature, chemical etching of Si by halogen atoms follows the trend F > Cl > Br, expected from the Si-halogen bond strengths (140,90, and 80 kcal/mol, respectively). The dopant type and level strongly affects the Cl and Br reactivity.…”

Section: Si Etching In Halogen-containing Plasmasmentioning

confidence: 77%

“…There are numerous methods that have been used over the years in research laboratories and production environment, such as interferometry, 82 ellipsometry, [83][84][85] and optical emission spectroscopy (OES). [86][87][88][89][90] While ellipsometry is a useful research tool, it has not found much use in production. Interferometry was widely used in batch etchers, but with the transition to single wafer etchers, optical-emission monitoring became the preferred method for endpoint detection, due to its relative simplicity in terms of hardware and software implementation.…”

Section: F Endpoint Detectionmentioning

confidence: 99%

See 1 more Smart Citation

Plasma etching: Yesterday, today, and tomorrow

Donnelly¹,

Kornblit²

2013

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

673

422

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The field of plasma etching is reviewed. Plasma etching, a revolutionary extension of the technique of physical sputtering, was introduced to integrated circuit manufacturing as early as the mid 1960s and more widely in the early 1970s, in an effort to reduce liquid waste disposal in manufacturing and achieve selectivities that were difficult to obtain with wet chemistry. Quickly,the ability to anisotropically etch silicon, aluminum, and silicon dioxide in plasmas became the breakthrough that allowed the features in integrated circuits to continue to shrink over the next 40 years. Some of this early history is reviewed, and a discussion of the evolution in plasma reactor design is included. Some basic principles related to plasma etching such as evaporation rates and Langmuir–Hinshelwood adsorption are introduced. Etching mechanisms of selected materials, silicon,silicon dioxide, and low dielectric-constant materials are discussed in detail. A detailed treatment is presented of applications in current silicon integrated circuit fabrication. Finally, some predictions are offered for future needs and advances in plasma etching for silicon and nonsilicon-based devices.

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Section: Si Etching In Halogen-containing Plasmasmentioning

confidence: 77%

Section: F Endpoint Detectionmentioning

confidence: 99%

Plasma etching: Yesterday, today, and tomorrow

Donnelly¹,

Kornblit²

2013

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

673

422

View full text Add to dashboard Cite

show abstract

“…Variations in the time between consecutive reference signal pulses caused by frequency instabilities in the rotational speed of the chopper wheel lead to errors in the effective time delay, degrading the effective time resolution of the sample window per Eq. (1). For a SRS model, SR540 chopper wheel (as used in this work), the specifications list a phase jitter of 0.5 • , which leads to a less than 10 µs contribution to the sample window width at a pulse frequency of 250 Hz.…”

Section: A Synchronizing the Experiments To The Chopper Wheelmentioning

confidence: 99%

Time-resolved spectroscopy using a chopper wheel as a fast shutter

Wang

Wendt

Boffard

et al. 2015

Review of Scientific Instruments

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Widely available, small form-factor, fiber-coupled spectrometers typically have a minimum exposure time measured in milliseconds, and thus cannot be used directly for time-resolved measurements at the microsecond level. Spectroscopy at these faster time scales is typically done with an intensified charge coupled device (CCD) system where the image intensifier acts as a "fast" electronic shutter for the slower CCD array. In this paper, we describe simple modifications to a commercially available chopper wheel system to allow it to be used as a "fast" mechanical shutter for gating a fiber-coupled spectrometer to achieve microsecond-scale time-resolved optical measurements of a periodically pulsed light source. With the chopper wheel synchronized to the pulsing of the light source, the time resolution can be set to a small fraction of the pulse period by using a chopper wheel with narrow slots separated by wide spokes. Different methods of synchronizing the chopper wheel and pulsing of the light sources are explored. The capability of the chopper wheel system is illustrated with time-resolved measurements of pulsed plasmas.

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“…[ 11–14 ] However, EPD by monitoring several wavelengths becomes challenging due to viewport contamination and reduced signal sensitivity with small open areas. [ 15–18 ]…”

Section: Introductionmentioning

confidence: 99%

“…[11][12][13][14] However, EPD by monitoring several wavelengths becomes challenging due to viewport contamination and reduced signal sensitivity with small open areas. [15][16][17][18] Researchers have attempted to improve sensitivity using whole spectra by adopting various machinelearning techniques that utilize the signals from thousands of optical channels in a short time. [19][20][21][22][23][24][25][26][27][28][29][30][31][32] Dimension reduction methods, such as principal component analysis (PCA) [20][21][22] and non-negative matrix factorization (NMF), [23] have been developed to reduce the OES dataset dimensionality and extract patterns from the endpoint.…”

Section: Introductionmentioning

confidence: 99%

Spectral clustering algorithm for real‐time endpoint detection of silicon nitride plasma etching

Lee

Choi

Kim

et al. 2023

Plasma Processes & Polymers

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The spectral clustering algorithm (SCA) is developed for endpoint detection (EPD) of Si 3 N 4 plasma etching using optical emission spectroscopy (OES). OES signals are collected in real-time and filtered using discrete wavelet transform (DWT).The SCA using 3648 full-spectrum wavelengths with DWT filtering improves signal-to-noise ratio (SNR) by 2.78 times compared to single-wavelength related to N 2 molecule in 1.0% relative area etching. The wavelengths

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End Point Detection in Plasma Etching by Optical Emission Spectroscopy

Abstract: not Available.

Cited by 18 publications

References 2 publications

Plasma etching: Yesterday, today, and tomorrow

Plasma etching: Yesterday, today, and tomorrow

Time-resolved spectroscopy using a chopper wheel as a fast shutter

Spectral clustering algorithm for real‐time endpoint detection of silicon nitride plasma etching

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