Endotaxy of MnSb into GaSb

Braun, Wolfgang; Trampert, A.; Kaganer, Vladimir M.; Jenichen, B.; Satapathy, Dillip K.

doi:10.1016/j.jcrysgro.2006.09.022

Cited by 19 publications

(18 citation statements)

References 7 publications

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“…Mn extends several tens of nm into the substrate, forming MnAs. This seems similar to endotaxial growth of MnSb previously observed on InP [24], GaP [29] and GaSb [30] …”

Section: Sb Mn /supporting

confidence: 90%

Growth and characterisation of MnSb(0 0 0 1)/InGaAs(1 1 1)A epitaxial films

Mousley

Burrows

Ashwin

et al. 2018

Journal of Crystal Growth

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“…Mn extends several tens of nm into the substrate, forming MnAs. This seems similar to endotaxial growth of MnSb previously observed on InP [24], GaP [29] and GaSb [30] …”

Section: Sb Mn /supporting

confidence: 90%

Growth and characterisation of MnSb(0 0 0 1)/InGaAs(1 1 1)A epitaxial films

Mousley

Burrows

Ashwin

et al. 2018

Journal of Crystal Growth

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“…In the absence of incident As or Sb flux in our experiments, and given strong evidence for As removal by incident Mn, the formation of new As-rich reconstructions is likely to be hindered. However, structural rearrangements may be mediated both by mobile MnAs clusters (for which diffraction evidence was found by Braun et al [22]) and by mobile Ga atoms liberated by erosion of the As-rich reconstructions [55].…”

Section: Reconstructionsmentioning

confidence: 99%

“…This suggests that the 3D islands are nearly pure Mn for deposition on the c(8×2) surface, but during growth and Sb removal on the c(4 × 4) surface, Sb is incorporated into the 3D islands to give a composition close to stoichiometric MnSb. During MnAs growth on GaAs(0 0 1), Braun et al found RHEED evidence (powder-like diffraction rings) for randomly oriented clusters with MnAs-like bond length during nucleation at sub-ML coverage [22]. Since the film becomes epitaxial, these clusters must be mobile.…”

Section: Thermodynamicsmentioning

confidence: 99%

“…For example, while Mn pre-layers have been used in (non-MBE) growth of MnSb on GaAs [20], Mn deposition on to GaAs surfaces is known to lead to magnetic ordering and a change of reconstruction [21]. A second example is the growth of MnSb on GaAs versus InP or GaSb-sharp interfaces are readily formed on GaAs while on both of the latter substrates endotaxial growth occurs due to interdiffusion [22,23]. Recent work has highlighted the importance of the initial substrate reconstruction in the growth of both Fe on GaAs [24,25] and magnetic oxides on magnesia or alumina [26].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Interaction of Mn with GaAs and InSb: incorporation, surface reconstruction and nano-cluster formation

Burrows

Hatfield

Bastiman

et al. 2014

J. Phys.: Condens. Matter

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The deposition of Mn on to reconstructed InSb and GaAs surfaces, without coincident As or Sb flux, has been studied by reflection high energy electron diffraction, atomic force microscopy and scanning tunnelling microscopy. On both Ga-and As-terminated GaAs(0 0 1), (2 × n) Mn-induced reconstruction domains arise with n = 2 for the most well ordered reconstructions. On the Ga-terminated (4 × 6), the Mn-induced (2 × 2) persists up to around 0.5 ML Mn followed by Mn nano-cluster formation. For deposition on initially β2(2 × 4)-reconstructed GaAs(0 0 1), the characteristic trench structure of the reconstruction is partially preserved even beyond 1 monolayer Mn coverage. On both the β2(2 × 4) and c(4 × 4) surfaces, MnAs-like nano-clusters form alongside the reconstruction changes. In contrast, there are no new Mn-induced surface reconstructions on InSb. Instead, the Sb-terminated surfaces of InSb (0 0 1), (1 1 1)A and (1 1 1)B revert to reconstructions characteristic of clean In-rich surfaces after well defined coverages of Mn proportional to the Sb content of the starting reconstruction. These surfaces are decorated with self-assembled MnSb nanoclusters. These results are discussed in terms of basic thermodynamic quantities and the generalized electron counting rule.

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“…NiMnSb) are attractive ferromagnetic materials for several reasons. They have generally good chemical and epitaxial compatibility with III-V semiconductors, and with some exceptions [2,3] form stable, non-reactive interfaces [4,5]. Their constituent materials can be sublimated in a regular III-V molecular beam epitaxy (MBE) chamber and multilayer structures of ferromagnetic and semiconducting material can be grown [5].…”

Section: Introductionmentioning

confidence: 99%