Endothermic ion-molecule reactions in silane

Henis, J. M. S.; Stewart, G. W.; Gaspar, Peter P.

doi:10.1063/1.1679712

Cited by 23 publications

(8 citation statements)

References 17 publications

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“…Endothermic reactions of cations have been studied by Yu et al [65] and HENIS et al [69] in SiH4, by CHENC et al [66] in SizHB and by Allen et al [64] in H2. These reactions involve H atom elimination such as…”

Section: A T I O N -M O L E C U L E R E a C T I O N S Si H Y D R I mentioning

confidence: 99%

Cross‐Sections, Rate Constants and Transport Coefficients in Silane Plasma Chemistry

Perrin

Leroy

Bordage

1996

Contrib. Plasma Phys.

342

260

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This paper presents a critical review of the basic data concerning the physics and chemistry of low pressure SiH4 glow discharges used to deposit hydrogenated amorphous silicon films (a&: H). Starting with an updated table of thermochemical data, we analyze the gas-phase elementary processes consisting of i) electron-molecule collisions, ii) ion-molecule collisions, iii) neutral-neutral collisions, iv) other electron and ion collisions involving electron-ion and ion-ion recombination, electron attachment on radicals and detachment of anions, and v) cluster growth kinetics in dusty plasmas. Experimental data or theoretical estimates are given and discussed in terms of cross-sections, collision and reaction rate constants, and transport coefficients. We also analyze the surface processes and reaction probabilities of ions, radicals and molecules.

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Section: A T I O N -M O L E C U L E R E a C T I O N S Si H Y D R I mentioning

confidence: 99%

Cross‐Sections, Rate Constants and Transport Coefficients in Silane Plasma Chemistry

Perrin

Leroy

Bordage

1996

Contrib. Plasma Phys.

342

260

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“…1 the secondary ions, Si 2 H n + (n = 1-5), were observed and their formation was related to the SiH 2 + reactant ion. Subsequent studies [2][3][4][5][6] showed however that all the primary SiH n + (n = 0-3) ions react with SiH 4 and participate in processes leading to Si 2 -cations. Larger siliconhydrogen cluster ions were also observed 2 and subsequently investigated under various experimental conditions.…”

Section: Journal Of Mass Spectrometrymentioning

confidence: 99%

“…Larger siliconhydrogen cluster ions were also observed 2 and subsequently investigated under various experimental conditions. [7][8][9] the rate constants, the thermochemistry, and the mechanistic aspects of the ionic processes occurring in ionised SiH 4 have been discussed, in particular, in two series of benchmark experimental [10][11][12][13][14][15] and theoretical [16][17][18][19] studies. the ion chemistry occurring in SiH 4 -based mixtures has been also investigated with considerable interest (especially by Lambert and co-workers), [20][21][22][23][24][25][26][27][28][29][30][31][32][33][34][35][36][37] related also to the role of ionic species in the formation of electronic and optoelectronic materials by chemical vapour deposition techniques.…”

Section: Journal Of Mass Spectrometrymentioning

confidence: 99%

Positive Ion Chemistry of SiH₄/NF₃ Gaseous Mixtures Studied by Ion Trap Mass Spectrometry

Antoniotti

Operti

Ragazzoni

et al. 2009

Eur J Mass Spectrom (Chichester)

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The positive ion chemistry occurring in silane/nitrogen trifluoride gaseous mixtures has been investigated by ion trap mass spectrometry. Reaction sequences and rate constants have been determined for the processes involving the primary ions SiH(n)(+) (n = 0-3) and NF(x)(+) (x = 1-3) and the secondary ions obtained from their reactions with SiH(4) and NF(3). The SiH(n)(+) efficiently react with NF(3) and undergo cascades of abstraction and scrambling reactions which form the fluorinated and perfluorinated cations SiHF(m)(+) (m = 1, 2), SiH(2)F(+) and SiF(x)(+) (x = 0-3). Fluorinated Si(2)- clusters such as Si(2)H(2)F(+), Si(2)H(3)F(+) and Si(2)H(5)F(+) were also observed. The reaction of both SiH(3)(+) and SiH(2)F(+) with NF(3) produces the elusive fluoronitrenium ion NHF(+). Any NF(x)(+) reacts with SiH(4) mainly by charge transfer. Additional ionic products are, however, observed which suggest intimate reaction complexes. Worth mentioning is the formation of SiNH(2)(+) from the reaction of both NF(+) and NHF(+) with SiH(4). The primary ions NF(2)(+) and SiH(2)(+) are also "sink" species in our observed chemistry.

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“…the chemically constrained clustering reactions that are observed for subsilane cations with pure silane and disilane. [11][12][13][14][15][16][17][18][19][20] In both silane and disilane, all cation clustering reactions lead to terminal cluster ions at quite small sizes where further growth stops. [14][15][16][17][18][19][20][21][22][23][24] The chemistry of small Six Dycluster anions with pure silane is less well known.…”

Section: Introductionmentioning

confidence: 99%

How to grow large clusters from SixD+y ions in silane or disilane: Water them!

Mandich

Reents

1992

The Journal of Chemical Physics

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Growth of large cationic clusters is observed in real time for subsilane and subdisilane cations in the presence ofsilane/disilane-water mixtures. SiOt3 and Si 2 Dtb are created by electron impact in the trapped ion cell of a Fourier transform mass spectrometer and their sequential clustering reactions with 5% water: 95% siIane/disiIane are monitored for up to 80 s at total pressures of 10-7 _10-5 Torr. Formation of Six OyO/ clusters out to at least 450amu in silane and 650 amu in disilane can be seen on the available experimental time scales. The early portion of the sequence leading to large clusters has been elucidated for silane. Amazingly, of the possible subsiIane cations, only SiD + reacts with silane and water to form increasingly larger cluster sizes. Reactions of the other subsilane cations, SiD o +i_3, do not continue without apparent limit. Initial growth of SiD + proceeds in a highly specific ·fashion involving the fonllation of two critical doorway ions, Si 4 Dl followed by Si 4 D7 0 + . The growth pattern then fans out to include numerous alternating and parallel reactions with both SiD 4 and D 2 0. Several general features of the growth reactions are seen. Reactions with SiD 4 are noticeably slower than reactions with O 2 O. Cluster growth by bimolecular reaction with SiD 4 and D 2 0 occurs by addition ofSiD z and addition of an oxygen atom, respectively, accompanied by elimination of D2 . Loss of additional molecules of D2 sometimes occurs, particularly as clustering proceeds to large sizes. Cluster growth by termolecular attachment of SiD 4 or D 2 0 is also seen. This process results in the formation of Six DyO/ complexes with Si0 4 and D 2 0 that appear to serve as important intermediates which enhance cluster growth rates as the total pressure is increased. Sequential clustering without apparent limit is only observed for subsilane and subdisilane cations with silane and disilane when water is present. On this basis, it is proposed that low levels of water contamination can provide a key ingredient for the chemistry which leads to the formation of the hydrogenated silicon particles found ubiquitously in silane plasmas.

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Endothermic ion-molecule reactions in silane

Cited by 23 publications

References 17 publications

Cross‐Sections, Rate Constants and Transport Coefficients in Silane Plasma Chemistry

Cross‐Sections, Rate Constants and Transport Coefficients in Silane Plasma Chemistry

Positive Ion Chemistry of SiH₄/NF₃ Gaseous Mixtures Studied by Ion Trap Mass Spectrometry

How to grow large clusters from SixD+y ions in silane or disilane: Water them!

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Endothermic ion-molecule reactions in silane

Cited by 23 publications

References 17 publications

Cross‐Sections, Rate Constants and Transport Coefficients in Silane Plasma Chemistry

Cross‐Sections, Rate Constants and Transport Coefficients in Silane Plasma Chemistry

Positive Ion Chemistry of SiH4/NF3 Gaseous Mixtures Studied by Ion Trap Mass Spectrometry

How to grow large clusters from SixD+y ions in silane or disilane: Water them!

Contact Info

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Positive Ion Chemistry of SiH₄/NF₃ Gaseous Mixtures Studied by Ion Trap Mass Spectrometry