2021
DOI: 10.1021/acs.jpcc.1c06092
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Energetic, Electronic, and Optical Properties of Intrinsic Charge Carrier-Trapping Defects in KTaO3: Insights from a Hybrid DFT Study

Abstract: Potassium tantalate (KTaO3) has emerged as a leading material for various industrial and technological applications owing to its excellent stability and electronic properties. In spite of extensive research conducted in the past decades, key defects in KTaO3 are still being investigated. In this study, a detailed systematic calculation using hybrid density functional theory has been carried out to investigate geometry, defect formation energies, and electronic properties of all possible neutral and charged int… Show more

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Cited by 14 publications
(4 citation statements)
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“…In general, the photogenerated carriers in 2DEG mainly come from the in-gap state-related transition in KTO. Considering that the photon energy in the current experiment (∼3.1 eV) is smaller than the band gap of KTO crystal (∼3.6 eV) [46], light illumination can only excite the in-gap states in KTO. When irradiated with the same laser power, the amount of photogenerated carriers should be the same for the two samples, supposing the recombination rates of carriers in the two samples are the same.…”
Section: Temperature-dependent Resistance With and Without Lightmentioning
confidence: 83%
See 1 more Smart Citation
“…In general, the photogenerated carriers in 2DEG mainly come from the in-gap state-related transition in KTO. Considering that the photon energy in the current experiment (∼3.1 eV) is smaller than the band gap of KTO crystal (∼3.6 eV) [46], light illumination can only excite the in-gap states in KTO. When irradiated with the same laser power, the amount of photogenerated carriers should be the same for the two samples, supposing the recombination rates of carriers in the two samples are the same.…”
Section: Temperature-dependent Resistance With and Without Lightmentioning
confidence: 83%
“…For the 2DEG at the KTO surface obtained by Ar ion bombardment, the bombardment time determines the amount of oxygen vacancies and hence the electron doping level [47]. It has been well recognized that the introduction of oxygen vacancies in the KTO surface results in a broad in-gap state in KTO located at 1.63 and 0.87 eV below the CBM [46]. In the study, the energy of all photons (1.0~3.06 eV) is smaller than the band gap of KTO, suggesting that the in-gap band associated with oxygen vacancies plays a key role in the photoresponse of the 2DEG at the KTO surface.…”
Section: Wavelength-dependent Photoresponse At Different Temperaturesmentioning
confidence: 99%
“…Brillouin zone sampling has been performed by a Γ-centered k -point mesh value of 6 × 6 × 6 for the supercell using the Monkhorst and Pack scheme . To overcome the limitation of standard DFT during band gap calculations, we employed the hybrid functional of Heyd, Scuseria, and Ernzerhof (HSE), which is shown to reproduce the experimental band gap for a wide range of materials. According to this functional, the ion-core interaction is separated into two parts: short range (SR) and long range (LR). The interaction in the SR is described by both exact Hartree–Fock (HF) exchange and PBE exchange, while the LR is solely described by PBE.…”
Section: Methodsmentioning
confidence: 99%
“…However, the states appearing around the CBM are localized and unoccupied, which may trap the photoexcited electrons and holes, and enhance the recombination possibility. 67,68 The photoconversion efficiency of the Ru-monodoped ZnS(110) surface would be potentially suppressed.…”
Section: Doped Zns(110) Surfacesmentioning
confidence: 99%