Energetics of reactions in a dielectric barrier discharge with argon carrier gas: VIII hydrofluoromethanes

Abstract

The method we have developed for understanding energetic exchanges between precursor molecules and argon (Ar) carrier gas in a dielectric barrier discharge (DBD) has much-proven merit. The present article focuses on hydrofluoromethanes, CH x F y . The precursors (‰ concentrations) were mixed with Ar in a 20 kHz, 8 kV (peak-to-peak) DBD. For each compound, E m , the energy absorbed per molecule, was plotted as a function of precursor flow rate. Besides the

Control strategies for atmospheric pressure plasma polymerization of fluorinated silane thin films with antiadhesive properties

“…[20,31,32] Despite being validated for different families of precursors, this methodology is still limited to the context of planar dielectric barrier discharges (DBDs) and to vaporized precursors. [33][34][35][36][37][38][39] The choice of the authors to focus on this experimental configuration is certainly not accidental: DBDs are appealing for a wide range of industrial applications due to the easy formation of a stable discharge and their scalability, [9,40] while vaporized precursors are the most commonly used in plasma polymerization processes. [41] Nevertheless, the number of plasma sources of high industrial potential is much broader.…”