Energization‐Time Dependence of Electrical Properties of Anodized n‐GaN Grown on Si Substrates
Gaku Kamio,
Hiroshi Fujioka,
Narihiko Maeda
Abstract:With a view to device applications as a new material, n‐GaN grown on Si substrates is anodized at 4 V in an electrolyte solution for different energization times (15–240 min), and the dependence of the changes in electrical properties on the anodization time is evaluated. Anodization at 4 V increases the resistivity of n‐GaN with increasing energization time. To investigate the origin of the increase in resistivity by anodization, the results of the temperature dependence of the Hall mobility and electron dens… Show more
Set email alert for when this publication receives citations?
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.