Energy and Temperature Dependence of Electron Irradiation Damage in GaAs

Kalma, A. H.; Berger, R.; Fischer, C.; Green, B. A.

doi:10.1109/tns.1975.4328119

Cited by 14 publications

(7 citation statements)

References 9 publications

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“…Experimentally, there has been some uncertainty in the value of the displacement energy in GaAs. Some early sources reported threshold ͑minimum͒ displacement values around 25 eV, 35 but most recent sources report values close to 10 eV. 28,36 -38 We could not find a value for the effective ͑average͒ displacement energy measured using nonelectrical methods at low temperatures, to which our displacement value would correspond.…”

Section: A Damage Production In Cascadesmentioning

confidence: 65%

Defect clustering during ion irradiation of GaAs: Insight from molecular dynamics simulations

Nordlund

Peltola

Nord

et al. 2001

Journal of Applied Physics

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Defect formation in compound semiconductors such as GaAs under ion irradiation is not as well understood as in Si and Ge. We show how a combination of ion range calculations and molecular dynamics computer simulations can be used to predict the atomic-level damage structures produced by MeV ions. The results show that the majority of damage produced in GaAs both by low-energy self-recoils and 6 MeV He ions is in clusters, and that a clear majority of the isolated defects are interstitials. Implications of the results for suggested applications are also discussed.

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Section: A Damage Production In Cascadesmentioning

confidence: 65%

Defect clustering during ion irradiation of GaAs: Insight from molecular dynamics simulations

Nordlund

Peltola

Nord

et al. 2001

Journal of Applied Physics

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“…A comparable value was obtained in ref. [29]. This is slightly greater than the value of the threshold displacement energy measured by Grimshaw [30] and Pegler [31], which is 17-18 eV.…”

Section: Discussionmentioning

confidence: 56%

“…Many studies deal with the radiation induced damage production in GaAs [25][26][27][28][29][30][31][32][33][34][35][36][37][38][39][40]. Many authors tried to define experimentally the threshold displacement energy.…”

Section: Discussionmentioning

confidence: 99%

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Gamma and Electron NIEL Dependence of Irradiated GaAs

Allam

Inguimbert

Nuns

et al. 2017

IEEE Trans. Nucl. Sci.

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In GaAs material, the radiation-induced degradations are demonstrated to vary according to the Non Ionizing Energy Loss (NIEL). But some discrepancies are still observed between experimental degradation measurements and predicted NIELs. The used displacement threshold energy (T d ) varies, from one author to another, from 10 eV up to 25 eV. A measurement made with 60 Co gamma rays is used to investigate the relevance of the NIEL scaling law for both electrons and gamma rays. A T d value of 21 eV is found to be the most appropriate value, to properly scale the present experimental degradation measurements.

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“…Many damage factors are therefore directly compared to NIEL. The well-known "NIEL scaling approach" is shown to work quite well in most cases [1][2][3][4][5][6][7][8][9][10][11][12][13][14], apart from some deviations observed for electrons [15,16,28] in Si, GaAs and InGaAs, for high energy protons in GaAs [17][18][19][20][21][22] and for neutrons in GaAs [23]. Some authors also report that NIEL has to be used very carefully and is not shown to be valid for changes in depletion voltage of oxygenated and standard Silicon detectors [24].…”

Section: Introductionmentioning

confidence: 99%

Statistical spread on the displacement damage degradation of irradiated semiconductors

Inguimbert¹,

Durand²,

Nuns³

et al. 2021

Nuclear Instruments and Methods in Physics Research Section B:

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Energy and Temperature Dependence of Electron Irradiation Damage in GaAs

Cited by 14 publications

References 9 publications

Defect clustering during ion irradiation of GaAs: Insight from molecular dynamics simulations

Defect clustering during ion irradiation of GaAs: Insight from molecular dynamics simulations

Gamma and Electron NIEL Dependence of Irradiated GaAs

Statistical spread on the displacement damage degradation of irradiated semiconductors

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