Energy band alignment in operando inverted structure P3HT:PCBM organic solar cells

Chen, Qi; Ye, Fengye; Lai, Junqi; Dai, Pengcheng; Lu, Shenglian; Ma, Chang‐Qi; Zhao, Yanfei; Xie, Yi; Chen, Liwei

doi:10.1016/j.nanoen.2017.08.050

Cited by 25 publications

(18 citation statements)

References 49 publications

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“…Therefore, a high lateral resolution together with a reliable quantification of the local potential is required. In the past, KPFM measurements have frequently been used to image potential distributions on cross sections of a range of different solar cell devices, including organic [ 3 – 5 ], and inorganic [ 6 ] as well as hybrid perovskite solar cells [ 7 – 15 ].…”

Section: Introductionmentioning

confidence: 99%

Know your full potential: Quantitative Kelvin probe force microscopy on nanoscale electrical devices

Axt

Hermes

Bergmann

et al. 2018

Beilstein J. Nanotechnol.

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In this study we investigate the influence of the operation method in Kelvin probe force microscopy (KPFM) on the measured potential distribution. KPFM is widely used to map the nanoscale potential distribution in operating devices, e.g., in thin film transistors or on cross sections of functional solar cells. Quantitative surface potential measurements are crucial for understanding the operation principles of functional nanostructures in these electronic devices. Nevertheless, KPFM is prone to certain imaging artifacts, such as crosstalk from topography or stray electric fields. Here, we compare different amplitude modulation (AM) and frequency modulation (FM) KPFM methods on a reference structure consisting of an interdigitated electrode array. This structure mimics the sample geometry in device measurements, e.g., on thin film transistors or on solar cell cross sections. In particular, we investigate how quantitative different KPFM methods can measure a predefined externally applied voltage difference between the electrodes. We found that generally, FM-KPFM methods provide more quantitative results that are less affected by the presence of stray electric fields compared to AM-KPFM methods.

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Section: Introductionmentioning

confidence: 99%

Know your full potential: Quantitative Kelvin probe force microscopy on nanoscale electrical devices

Axt

Hermes

Bergmann

et al. 2018

Beilstein J. Nanotechnol.

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“…Excited electrons from the QD valence band accumulated in the conduction band, and the surface potential could then be modulated. 33,35,36 The V CPD of the QDs/ZnO surface on ITO also increased under illumination at 635 nm, as shown in Fig. 6c (DV CPD ¼ 108 mV).…”

Section: Resultsmentioning

confidence: 76%

Highly transparent phototransistor based on quantum-dots and ZnO bilayers for optical logic gate operation in visible-light

et al. 2020

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“…The method consisted of calibration of the tip transfer function on a molecular beam epitaxy grown GaInP/GaAs reference sample and a numerical deconvolution calculation . The deconvolution process was capable of revealing abrupt energy level offsets at cathode and anode interlayers, which were otherwise masked by the convolution effect in inverted structure OPV devices . For more sophisticated interfaces on the length scale of a few nanometers or less, high‐resolution imaging becomes necessary.…”

Section: Energy Conversion Devicementioning

confidence: 98%

Section: Energy Conversion Devicementioning

confidence: 99%

“…In order to further recover the quantitative information of the entire potential depth profile, which can be converted to vacuum level alignment across the device by simply multiplying the absolute charge of electron, a deconvolution process was devised to negate the convolution effects. The method consisted of calibration of the tip transfer function on a molecular beam epitaxy grown GaInP/GaAs reference sample and a numerical deconvolution calculation . The deconvolution process was capable of revealing abrupt energy level offsets at cathode and anode interlayers, which were otherwise masked by the convolution effect in inverted structure OPV devices .…”

Section: Energy Conversion Devicementioning

confidence: 99%

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Functional Scanning Force Microscopy for Energy Nanodevices

et al. 2018

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Energy nanodevices, including energy conversion and energy storage devices, have become a major cross-disciplinary field in recent years. These devices feature long-range electron and ion transport coupled with chemical transformation, which call for novel characterization tools to understand device operation mechanisms. In this context, recent developments in functional scanning force microscopy techniques and their application in thin-film photovoltaic devices and lithium batteries are reviewed. The advantages of scanning force microscopy, such as high spatial resolution, multimodal imaging, and the possibility of in situ and in operando imaging, are emphasized. The survey indicates that functional scanning force microscopy is making significant contributions in understanding materials and interfaces in energy nanodevices.

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Energy band alignment in operando inverted structure P3HT:PCBM organic solar cells

Cited by 25 publications

References 49 publications

Know your full potential: Quantitative Kelvin probe force microscopy on nanoscale electrical devices

Know your full potential: Quantitative Kelvin probe force microscopy on nanoscale electrical devices

Highly transparent phototransistor based on quantum-dots and ZnO bilayers for optical logic gate operation in visible-light

Functional Scanning Force Microscopy for Energy Nanodevices

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