Energy Band Calculation and Zero Energy Gap Conditions for Semiconductor Superlattices

Abstract

The energy spectrum of the superlattice structure is analysed in detail, assuming that the spatial distributions of the potential energy and the effective mass are rectangular. It is shown that both wells and barriers may appear in the first and second materials, depending on the transverse component value of the wave vector. Two ZEG (zero energy gap) conditions are also derived; the second one being a direct consequence of the spatial dependence of the effective mass. The numerical analysis of results is performed on Bl,Gal-,As-GaAs superhttice structure. This numerical results confirm theoretical results exposed in the first part of the paper.Le spectre bnergbtiquc dc lo structure du super-rbeau a 6th nnalysh en dbtail, supposant que les distributions spatiales de l'bnergie potentielle et de la masse effective sont rectangulaires. On B d6montrc que tous les deux, les puits et les borrieres de potentiel peavent apparaEtre dans tous les deux matbrisux, dbpendant de la valeur des composantes transversnles du vecteur d'onde. O n a dbriv6 aussi deux conditions"ZEG"; la seconde btant lo conskquence directe dc la dbpendmce spatiale cle In. niasse effective. L'analysc numbrique des rksultats o k t b faite sup la structure du supcr-rC.seuu Bl,Gn~-,As-GaAs.Les rksultats numbriques confirment les rksultats thkoriques prksentbs dans Is premiere partie de cet article.

Panorama fenomenológico de la evolución del perfil potencial de componentes binarios del grupo III-V

“…Nevertheless, and according to Milanovic's predictions [39] hh experienced an e ective QW independently of the bandmixing value, whereas lh experienced an e ective QW when bandmixing values were low and a barrier when the bandmixing reached a critical value. Thus, for lh in all of the barrier constituting compounds in the present study (used in technological applications) we found transitions from a QW to an effective B type behavior when the incident energy values were higher than the barrier height.…”

“…Several studies [39] [40] have predicted the modification of the effective potential in the electronic case. Here the key lies in the fact that the behavior of both wells and effective barriers might appear in either of the materials of the binary alloy depending on the value of the transversal component of the wave vector [39].…”

“…Here the key lies in the fact that the behavior of both wells and effective barriers might appear in either of the materials of the binary alloy depending on the value of the transversal component of the wave vector [39].…”

Valence‐band effective‐potential evolution for coupled holes

“…This phenomenology, early quoted by Wessel and Altarelli in resonant tunneling [4], has been lately stressed for real-life technological devices [5]. Fundamental condensed-matter studies [6,7] had propelled us into the present modeling, since they have predicted the modification of the effective potential in the electronic case. Here the key lies in the fact that the potential-energy profile distribution in either of the binaryalloy slabs might evolve depending on the value of the transversal component of the wave vector [6,7].…”

“…Fundamental condensed-matter studies [6,7] had propelled us into the present modeling, since they have predicted the modification of the effective potential in the electronic case. Here the key lies in the fact that the potential-energy profile distribution in either of the binaryalloy slabs might evolve depending on the value of the transversal component of the wave vector [6,7]. With respect to the electron quantum transport through layered heterostructures, the situation become more cumbersome whenever the holes are involved.…”