Energy band offsets of BeO dielectrics grown via atomic-layer deposition on β-Ga2O3 substrates

Jung, Dohwan; Jang, Yoonseo; Sultane, Prakash R.; Bielawski, Christopher W.; Oh, Jungwoo

doi:10.1016/j.jallcom.2022.166197

Cited by 8 publications

(4 citation statements)

References 31 publications

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“…The band gaps of the samples were determined, and the XPS provided the core-level binding energies. Using Kraut’s method [ 23 ], the valence band offset (VBO) and the conduction band offset (CBO) can be derived with

where

and

are the binding energy of gallium oxide and GaP 2p 3/2 peaks.

and

are the binding energies for the VBM of Ga 2 O 3 and GaP, measured using the valence band spectra from XPS.…”

Section: Resultsmentioning

confidence: 99%

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Advanced Fabrication of 3D Micro/Nanostructures of Gallium Oxide with a Tuned Band Gap and Optical Properties

Jamwal,

Kiani

2024

Micromachines

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Gallium oxide (Ga2O3) is a promising material for high-power semiconductor applications due to its wide band gap and high breakdown voltage. However, the current methods for fabricating Ga2O3 nanostructures have several disadvantages, including their complex manufacturing processes and high costs. In this study, we report a novel approach for synthesizing β-Ga2O3 nanostructures on gallium phosphide (GaP) using ultra-short laser pulses for in situ nanostructure generation (ULPING). We varied the process parameters to optimize the nanostructure formation, finding that the ULPING method produces high-quality β-Ga2O3 nanostructures with a simpler and more cost-effective process when compared with existing methods. Scanning electron microscopy (SEM) and energy-dispersive X-ray spectroscopy (EDX) were used to characterize the samples, which indicated the presence of phosphorous. X-ray photoelectron spectroscopy (XPS) confirmed the formation of gallium oxide, along with a minor amount of phosphorus-containing compounds. Structural analysis using X-ray diffraction (XRD) revealed the formation of a monoclinic β-polymorph of Ga2O3. We also measured the band gap of the materials using reflection electron energy loss spectroscopy (REELS), and found that the band gap increased with higher nanostructure formation, reaching 6.2 eV for the optimized sample. Furthermore, we observed a change in the heterojunction alignment, which we attribute to the change in the oxidation of the samples. Our results demonstrate the potential of ULPING as a novel, simple, and cost-effective method for fabricating Ga2O3 nanostructures with tunable optical properties. The ULPING method offers a green alternative to existing fabrication methods, making it a promising technology for future research in the field of Ga2O3 nanostructure fabrication.

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where

and

are the binding energy of gallium oxide and GaP 2p 3/2 peaks.

and

are the binding energies for the VBM of Ga 2 O 3 and GaP, measured using the valence band spectra from XPS.…”

Section: Resultsmentioning

confidence: 99%

“…Sim- The band gaps of the samples were determined, and the XPS provided the core-level binding energies. Using Kraut's method [23], the valence band offset (VBO) and the conduction band offset (CBO) can be derived with…”

mentioning

confidence: 99%

Advanced Fabrication of 3D Micro/Nanostructures of Gallium Oxide with a Tuned Band Gap and Optical Properties

Jamwal,

Kiani

2024

Micromachines

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“…These values are tabulated (Tab and this offset is illustrated using Figure 10. The band offsets were determined using Kraut's Method [22], where the valence band offset (VBO) [23],…”

Section: ∆𝐸 = 𝐸 − ∆𝐸 − 𝐸mentioning

confidence: 99%

Synthesis of Optoelectronic Nanostructures on Silicon and Gold-Coated Silicon via High-Intensity Laser Pulses at Varied Pulse Durations

Jamwal

Kiani

2023

Coatings

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This work defines the generation of nanostructures on silicon and gold-coated silicon substrates by tuning the pulse duration of our proposed method: ultra-short laser pulses for in situ nanostructure generation (ULPING) under ambient conditions. The method is a single-step novel method which is efficient in synthesizing nanostructures on the substrates. We observed a higher nanofiber generation at a shorter pulse duration using Scanning Electron Microscopy (SEM) imaging. Silicon oxide formation was confirmed by Energy-dispersive X-ray spectroscopy (EDX) and X-ray photoelectron spectroscopy (XPS) analysis and a band gap of 8.19 eV was achieved for the Si + Au sample, which was determined by the Reflection Electron Energy Loss Spectroscopy (REELS) spectra. A high valence band offset of 4.93 eV was measured for the silicon-based samples for the Si/SiO2 interface. The addition of gold nanoparticles decreased the band gap and we observed a blue shift in optical conductivity for samples with nanofibers using optical spectroscopy.

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“…The complete Be oxidation by the sintering process enhanced the portion of the Be-O-dominant spectra at 113.5 eV, while the chemical states of the Be-Be bonds when the binding energy was 110.7 eV were absent [29]. Furthermore, the Al-O peak at 119.0 eV represents the photoelectrons of Al 2 s in the sapphire substrate due to the penetration of X-rays into the BeO thin films [30,32]. Figure 6e shows the REELS fitting of the optical bandgap of BeO thin films with different sintering temperatures.…”

Section: Figure 1amentioning

confidence: 99%

Low Leakage Current Metal–Insulator–Metal Device Based on a Beryllium Oxide Insulator Created by a Two-Step Spin-Coating Method as a Novel Type of Modified Pechini Synthesis

et al. 2022

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Beryllium oxide (BeO) is considered to be an attractive alternative material for use in future industries in areas such as semiconductors, spacecraft, aircraft, and rocket technologies due to its high bandgap energy, useful melting point, good thermal conductivity, and dielectric constants. In this context, our approach is a novel method to produce BeO thin films based on a two-step spin-coating innovation of the conventional powder synthesis method. The surface morphology and the crystal structure of BeO thin films were observed to be dependent on the citric acid/beryllium sulfate ratio and the sintering temperature, respectively. To characterize the BeO films, X-ray photoelectron spectroscopy was conducted for an elemental analysis. Furthermore, the bandgap of the BeO thin films was determined by reflection electron energy loss spectroscopy. Finally, the leakage current of a planar metal–insulator–metal device consisting of Au/Ti/BeO thin film/Ti/Au electrodes was determined to be below the nA range over the linear voltage sweeping range of −20 V to +20 V. These results can assist researchers in the areas of morphology control strategies, phase transfer theories, and applications that utilize BeO thin film manufactured by a solution process.

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Energy band offsets of BeO dielectrics grown via atomic-layer deposition on β-Ga2O3 substrates

Cited by 8 publications

References 31 publications

Advanced Fabrication of 3D Micro/Nanostructures of Gallium Oxide with a Tuned Band Gap and Optical Properties

Advanced Fabrication of 3D Micro/Nanostructures of Gallium Oxide with a Tuned Band Gap and Optical Properties

Synthesis of Optoelectronic Nanostructures on Silicon and Gold-Coated Silicon via High-Intensity Laser Pulses at Varied Pulse Durations

Low Leakage Current Metal–Insulator–Metal Device Based on a Beryllium Oxide Insulator Created by a Two-Step Spin-Coating Method as a Novel Type of Modified Pechini Synthesis

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